Semiconductor Chip Including Integrated Circuit Including At Least Five Gate Level Conductive Structures Having Particular Spatial and Electrical Relationship and Method for Manufacturing the Same

ABSTRACT

A semiconductor chip region includes a first conductive structure (CS) that forms a gate electrode (GE) of a first transistor of a first transistor type (TT) and a GE of a first transistor of a second TT, a second CS that forms a GE of a second transistor of the first TT, a third CS that forms a GE of a second transistor of the second TT, a fourth CS that forms a GE of a third transistor of the first TT, and a fifth CS that forms a GE of a third transistor of the second TT. Diffusion terminals of the first and second transistors of the first TT are electrically connected. Diffusion terminals of the first and second transistors of the second TT are electrically connected. Diffusion terminals of the second and third transistors of both the first TT and second TT are electrically connected.

CLAIM OF PRIORITY

This application is a continuation application under 35 U.S.C. 120 ofprior U.S. application Ser. No. 13/774,919, filed on Feb. 22, 2013,which is a continuation application under 35 U.S.C. 120 of prior U.S.application Ser. No. 12/572,225, filed on Oct. 1, 2009, issued as U.S.Pat. No. 8,436,400, on May 7, 2013, which is a continuation applicationunder 35 U.S.C. 120 of prior U.S. application Ser. No. 12/212,562, filedSep. 17, 2008, issued as U.S. Pat. No. 7,842,975, on Nov. 30, 2010,which is a continuation application under 35 U.S.C. 120 of prior U.S.application Ser. No. 11/683,402, filed Mar. 7, 2007, issued as U.S. Pat.No. 7,446,352, on Nov. 4, 2008, which claims priority under 35 U.S.C.119(e) to U.S. Provisional Patent Application No. 60/781,288, filed Mar.9, 2006. Each of the above-identified applications is incorporatedherein by reference in its entirety.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is related to each application identified in the tablebelow. The disclosure of each application identified in the table belowis incorporated herein by reference in its entirety.

Attorney Docket No. Application No. Filing Date TELAP004AC2 12/561,207Sep. 16, 2009 TELAP004AC3 12/561,216 Sep. 16, 2009 TELAP004AC412/561,220 Sep. 16, 2009 TELAP004AC5 12/561,224 Sep. 16, 2009TELAP004AC6 12/561,229 Sep. 16, 2009 TELAP004AC7 12/561,234 Sep. 16,2009 TELAP004AC8 12/561,238 Sep. 16, 2009 TELAP004AC9 12/561,243 Sep.16, 2009 TELAP004AC10 12/561,246 Sep. 16, 2009 TELAP004AC11 12/561,247Sep. 16, 2009 TELAP004AC12 12/563,031 Sep. 18, 2009 TELAP004AC1312/563,042 Sep. 18, 2009 TELAP004AC14 12/563,051 Sep. 18, 2009TELAP004AC15 12/563,056 Sep. 18, 2009 TELAP004AC16 12/563,061 Sep. 18,2009 TELAP004AC17 12/563,063 Sep. 18, 2009 TELAP004AC18 12/563,066 Sep.18, 2009 TELAP004AC19 12/563,074 Sep. 18, 2009 TELAP004AC20 12/563,076Sep. 18, 2009 TELAP004AC21 12/563,077 Sep. 18, 2009 TELAP004AC2212/567,528 Sep. 25, 2009 TELAP004AC23 12/567,542 Sep. 25, 2009TELAP004AC24 12/567,555 Sep. 25, 2009 TELAP004AC25 12/567,565 Sep. 25,2009 TELAP004AC26 12/567,574 Sep. 25, 2009 TELAP004AC27 12/567,586 Sep.25, 2009 TELAP004AC28 12/567,597 Sep. 25, 2009 TELAP004AC29 12/567,602Sep. 25, 2009 TELAP004AC30 12/567,609 Sep. 25, 2009 TELAP004AC3112/567,616 Sep. 25, 2009 TELAP004AC32 12/567,623 Sep. 25, 2009TELAP004AC33 12/567,630 Sep. 25, 2009 TELAP004AC34 12/567,634 Sep. 25,2009 TELAP004AC35 12/567,641 Sep. 25, 2009 TELAP004AC36 12/567,648 Sep.25, 2009 TELAP004AC37 12/567,654 Sep. 25, 2009 TELAP004AC38 12/571,343Sep. 30, 2009 TELAP004AC39 12/571,351 Sep. 30, 2009 TELAP004AC4012/571,357 Sep. 30, 2009 TELAP004AC41 12/571,998 Oct. 1, 2009TELAP004AC42 12/572,011 Oct. 1, 2009 TELAP004AC43 12/572,022 Oct. 1,2009 TELAP004AC44 12/572,046 Oct. 1, 2009 TELAP004AC45 12/572,055 Oct.1, 2009 TELAP004AC46 12/572,061 Oct. 1, 2009 TELAP004AC47 12/572,068Oct. 1, 2009 TELAP004AC48 12/572,077 Oct. 1, 2009 TELAP004AC4912/572,091 Oct. 1, 2009 TELAP004AC50 12/572,194 Oct. 1, 2009TELAP004AC51 12/572,201 Oct. 1, 2009 TELAP004AC52 12/572,212 Oct. 1,2009 TELAP004AC53 12/572,218 Oct. 1, 2009 TELAP004AC54 12/572,221 Oct.1, 2009 TELAP004AC55 12/572,225 Oct. 1, 2009 TELAP004AC56 12/572,228Oct. 1, 2009 TELAP004AC57 12/572,229 Oct. 1, 2009 TELAP004AC5812/572,232 Oct. 1, 2009 TELAP004AC59 12/572,237 Oct. 1, 2009TELAP004AC60 12/572,239 Oct. 1, 2009 TELAP004AC61 12/572,243 Oct. 1,2009 TELAP004AC62 13/774,919 Feb. 22, 2013 TELAP004AC63 13/774,940 Feb.22, 2013 TELAP004AC64 13/774,954 Feb. 22, 2013 TELAP004AC65 13/774,970Feb. 22, 2013 TELAP004AC66 13/827,615 Mar. 14, 2013 TELAP004AC6713/827,755 Mar. 14, 2013 TELAP004AC68 13/834,302 Mar. 15, 2013TELAP004AC69 13/837,123 Mar. 15, 2013 TELAP004AC75 14/304,778 Jun. 13,2014 TELAP004AC76 14/711,731 May 13, 2015 TELAP004AC77 14/731,316 Jun.4, 2015 BECKP004B 12/013,342 Jan. 11, 2008 BECKP004B.C1 13/073,994 Mar.28, 2011 BECKP004C 12/013,356 Jan. 11, 2008 BECKP004C.C1 13/047,474 Mar.14, 2011 BECKP004C.C2 14/276,528 May 13, 2014 BECKP004D 12/013,366 Jan.11, 2008 BECKP004D.C1 13/007,582 Jan. 14, 2011 BECKP004D.C2 13/007,584Jan. 14, 2011 TELAP014 12/363,705 Jan. 30, 2009 TELAP014.D1 13/897,307May 17, 2013 TELAP014.D1.C1 14/216,891 Mar. 17, 2014 TELAP015A12/402,465 Mar. 11, 2009 TELAP015AC1 12/753,711 Apr. 2, 2010 TELAP015AC212/753,727 Apr. 2, 2010 TELAP015AC3 12/753,733 Apr. 2, 2010 TELAP015AC412/753,740 Apr. 2, 2010 TELAP015AC5 12/753,753 Apr. 2, 2010 TELAP015AC612/753,758 Apr. 2, 2010 TELAP015AC6A 13/741,298 Jan. 14, 2013TELAP015AC7 12/753,766 Apr. 2, 2010 TELAP015AC7A 13/589,028 Aug. 17,2012 TELAP015AC8 12/753,776 Apr. 2, 2010 TELAP015AC9 12/753,789 Apr. 2,2010 TELAP015AC10 12/753,793 Apr. 2, 2010 TELAP015AC11 12/753,795 Apr.2, 2010 TELAP015AC12 12/753,798 Apr. 2, 2010 TELAP015AC12A 13/741,305Jan. 14, 2013 TELAP015AC13 12/753,805 Apr. 2, 2010 TELAP015AC1412/753,810 Apr. 2, 2010 TELAP015AC15 12/753,817 Apr. 2, 2010TELAP015AC16 12/754,050 Apr. 5, 2010 TELAP015AC17 12/754,061 Apr. 5,2010 TELAP015AC18 12/754,078 Apr. 5, 2010 TELAP015AC19 12/754,091 Apr.5, 2010 TELAP015AC20 12/754,103 Apr. 5, 2010 TELAP015AC21 12/754,114Apr. 5, 2010 TELAP015AC22 12/754,129 Apr. 5, 2010 TELAP015AC2312/754,147 Apr. 5, 2010 TELAP015AC24 12/754,168 Apr. 5, 2010TELAP015AC25 12/754,215 Apr. 5, 2010 TELAP015AC26 12/754,233 Apr. 5,2010 TELAP015AC27 12/754,351 Apr. 5, 2010 TELAP015AC27A 13/591,141 Aug.21, 2012 TELAP015AC28 12/754,384 Apr. 5, 2010 TELAP015AC29 12/754,563Apr. 5, 2010 TELAP015AC30 12/754,566 Apr. 5, 2010 TELAP015AC3113/831,530 Mar. 14, 2013 TELAP015AC32 13/831,605 Mar. 15, 2013TELAP015AC33 13/831,636 Mar. 15, 2013 TELAP015AC34 13/831,664 Mar. 15,2013 TELAP015AC35 13/831,717 Mar. 15, 2013 TELAP015AC36 13/831,742 Mar.15, 2013 TELAP015AC37 13/831,811 Mar. 15, 2013 TELAP015AC38 13/831,832Mar. 15, 2013 TELAP015AC40 14/242,308 Apr. 1, 2014 TELAP015AC4514/273,483 May 8, 2014 TELAP015AC46 14/303,587 Jun. 12, 2014TELAP015AC47 14/476,511 Sep. 3, 2014 TELAP015AC48 14/642,633 Mar. 9,2015 TELAP015AC49 14/945,361 Nov. 18, 2015 TELAP016 12/399,948 Mar. 7,2009 TELAP017 12/411,249 Mar. 25, 2009 TELAP017.D 13/085,447 Apr. 12,2011 TELAP017.D.C1 13/918,890 Jun. 14, 2013 TELAP017.D.C2 14/298,206Jun. 6, 2014 TELAP018 12/484,130 Jun. 12, 2009 TELAP019 12/479,674 Jun.5, 2009 TELAP020 12/481,445 Jun. 9, 2009 TELAP020.C1 13/898,155 May 20,2013 TELAP021 12/497,052 Jul. 2, 2009 TELAP021C1 13/540,529 Jul. 2, 2012TELAP021C2 14/040,590 Sep. 27, 2013 TELAP021C3 14/605,946 Jan. 26, 2015TELAP022A 12/466,335 May 14, 2009 TELAP022B 12/466,341 May 14, 2009TELAP023 12/512,932 Jul. 30, 2009 TELAP023.D1 14/834,295 Aug. 24, 2015TELAP048 12/435,672 May 5, 2009 TELAP048.DIV 14/181,556 Feb. 14, 2014TELAP049 12/775,429 May 6, 2010 TELAP051 12/904,134 Oct. 13, 2010TELAP051.D1 14/187,171 Feb. 21, 2014 TELAP053 13/373,470 Nov. 14, 2011TELAP053C1 14/875,570 Oct. 5, 2015 TELAP054 13/312,673 Dec. 6, 2011TELAP054.C1 14/481,845 Sep. 9, 2014 TELAP055 13/473,439 May 16, 2012TELAP055.C1 14/187,088 Feb. 21, 2014 TELAP056 13/740,191 Jan. 12, 2013TELAP056C1 13/841,951 Mar. 15, 2013

BACKGROUND

A push for higher performance and smaller die size drives thesemiconductor industry to reduce circuit chip area by approximately 50%every two years. The chip area reduction provides an economic benefitfor migrating to newer technologies. The 50% chip area reduction isachieved by reducing the feature sizes between 25% and 30%. Thereduction in feature size is enabled by improvements in manufacturingequipment and materials. For example, improvement in the lithographicprocess has enabled smaller feature sizes to be achieved, whileimprovement in chemical mechanical polishing (CMP) has in-part enabled ahigher number of interconnect layers.

In the evolution of lithography, as the minimum feature size approachedthe wavelength of the light source used to expose the feature shapes,unintended interactions occurred between neighboring features. Todayminimum feature sizes are approaching 45 nm (nanometers), while thewavelength of the light source used in the photolithography processremains at 193 nm. The difference between the minimum feature size andthe wavelength of light used in the photolithography process is definedas the lithographic gap. As the lithographic gap grows, the resolutioncapability of the lithographic process decreases.

An interference pattern occurs as each shape on the mask interacts withthe light. The interference patterns from neighboring shapes can createconstructive or destructive interference. In the case of constructiveinterference, unwanted shapes may be inadvertently created. In the caseof destructive interference, desired shapes may be inadvertentlyremoved. In either case, a particular shape is printed in a differentmanner than intended, possibly causing a device failure. Correctionmethodologies, such as optical proximity correction (OPC), attempt topredict the impact from neighboring shapes and modify the mask such thatthe printed shape is fabricated as desired. The quality of the lightinteraction prediction is declining as process geometries shrink and asthe light interactions become more complex.

In view of the foregoing, a solution is needed for managing lithographicgap issues as technology continues to progress toward smallersemiconductor device features sizes.

SUMMARY

In one embodiment, an integrated circuit is disclosed to include a firstgate electrode feature of a first gate electrode track. The first gateelectrode feature of the first gate electrode track forms a firstn-channel transistor as it crosses an n-diffusion region. The integratedcircuit also includes a second gate electrode feature of the first gateelectrode track. The second gate electrode feature of the first gateelectrode track forms a first p-channel transistor as it crosses ap-diffusion region. The first and second gate electrode features of thefirst gate electrode track are separated by a first end-to-end spacing.The integrated circuit also includes a first gate electrode feature of asecond gate electrode track. The first gate electrode feature of thesecond gate electrode track forms a second n-channel transistor as itcrosses the n-diffusion region. The integrated circuit also includes asecond gate electrode feature of the second gate electrode track. Thesecond gate electrode feature of the second gate electrode track forms asecond p-channel transistor as it crosses the p-diffusion region. Thefirst and second gate electrode features of the second gate electrodetrack are separated by a second end-to-end spacing that is offset fromthe first end-to-end spacing such that a line of sight perpendicular tothe first and second gate electrode tracks does not exist through thefirst and second end-to-end spacings.

In another embodiment, a cell of a semiconductor device is disclosed.The cell includes a substrate portion formed to include a plurality ofdiffusion regions. The plurality of diffusion regions respectivelycorrespond to active areas of the substrate portion within which one ormore processes are applied to modify one or more electricalcharacteristics of the active areas of the substrate portion. Theplurality of diffusion regions are separated from each other by one ormore non-active regions of the substrate portion.

Also in this embodiment, the cell includes a gate electrode level of thecell formed above the substrate portion. The gate electrode levelincludes a number of conductive features defined to extend in only afirst parallel direction. Adjacent ones of the number of conductivefeatures that share a common line of extent in the first paralleldirection are fabricated from respective originating layout featuresthat are separated from each other by an end-to-end spacing having asize measured in the first parallel direction. The size of eachend-to-end spacing between originating layout features corresponding toadjacent ones of the number of conductive features within the gateelectrode level of the cell is substantially equal and is minimized toan extent allowed by a semiconductor device manufacturing capability.The number of conductive features within the gate electrode level of thecell includes conductive features defined along at least four differentvirtual lines of extent in the first parallel direction across the gateelectrode level of the cell.

A width size of the conductive features within the gate electrode levelis measured perpendicular to the first parallel direction. The widthsize of the conductive features within a photolithographic interactionradius within the gate electrode level is less than a wavelength oflight used in a photolithography process to fabricate the conductivefeatures within the gate electrode level. The wavelength of light usedin the photolithography process is less than or equal to 193 nanometers.The photolithographic interaction radius is five wavelengths of lightused in the photolithography process.

Some of the number of conductive features within the gate electrodelevel of the cell are defined to include one or more gate electrodeportions which extend over one or more of the active areas of thesubstrate portion corresponding to the plurality of diffusion regions.Each gate electrode portion and a corresponding active area of thesubstrate portion over which it extends together define a respectivetransistor device.

Also in this embodiment, the cell includes a number of interconnectlevels formed above the gate electrode level of the cell. The substrateportion, the gate electrode level of the cell, and the number ofinterconnect levels are spatially aligned such that structuresfabricated within each of the substrate portion, the gate electrodelevel of the cell, and the number of interconnect levels spatiallyrelate to connect as required to form functional electronic deviceswithin the semiconductor device.

In one embodiment, a semiconductor chip includes a region including aplurality of transistors, where each of the plurality of transistors inthe region forms part of circuitry associated with execution of one ormore logic functions. The region includes at least ten conductivestructures formed within the semiconductor chip, where some of the atleast ten conductive structures form at least one transistor gateelectrode. Each of the at least ten conductive structures respectivelyhas a corresponding top surface, wherein an entirety of a periphery ofthe corresponding top surface is defined by a corresponding first end, acorresponding second end, a corresponding first edge, and acorresponding second edge, such that a total distance along the entiretyof the periphery of the corresponding top surface is equal to a sum of atotal distance along the corresponding first edge and a total distancealong the corresponding second edge and a total distance along thecorresponding first end and a total distance along the correspondingsecond end. The total distance along the corresponding first edge isgreater than two times the total distance along the corresponding firstend. The total distance along the corresponding first edge is greaterthan two times the total distance along the corresponding second end.The total distance along the corresponding second edge is greater thantwo times the total distance along the corresponding first end. Thetotal distance along the corresponding second edge is greater than twotimes the total distance along the corresponding second end. Thecorresponding first end extends from the corresponding first edge to thecorresponding second edge and is located principally within a spacebetween the corresponding first and second edges. The correspondingsecond end extends from the corresponding first edge to thecorresponding second edge and is located principally within the spacebetween the corresponding first and second edges. The top surfaces ofthe at least ten conductive structures are co-planar with each other.Each of the at least ten conductive structures has a correspondinglengthwise centerline oriented in a first direction along its topsurface and extending from its first end to its second end. Each of theat least ten conductive structures has a length as measured along itslengthwise centerline from its first end to its second end. The firstedge of each of the at least ten conductive structures is substantiallystraight. The second edge of each of the at least ten conductivestructures is substantially straight. Each of the at least tenconductive structures has both its first edge and its second edgeoriented substantially parallel to its lengthwise centerline. Each ofthe at least ten conductive structures has a width measured in a seconddirection perpendicular to the first direction at a midpoint of itslengthwise centerline. Each of the first direction and the seconddirection is oriented substantially parallel to the co-planar topsurfaces of the at least ten conductive structures. The at least tenconductive structures are positioned in a side-by-side manner such thateach of the at least ten conductive structures is positioned to have atleast a portion of its length beside at least a portion of the length ofanother of the at least ten conductive structures. The width of each ofthe at least ten conductive structures is less than 45 nanometers. Theregion has a size of about 965 nanometers as measured in the seconddirection. Each of the at least ten conductive structures is positionedsuch that a distance as measured in the second direction between itslengthwise centerline and the lengthwise centerline of at least oneother of the at least ten conductive structures is substantially equalto a first pitch that is less than or equal to about 193 nanometers. Theat least ten conductive structures includes a first conductivestructure. The first conductive structure includes a portion that formsa gate electrode of first transistor of a first transistor type. Thefirst conductive structure also includes a portion that forms a gateelectrode of a first transistor of a second transistor type. The atleast ten conductive structures includes a second conductive structure.The second conductive structure includes a portion that forms a gateelectrode of a second transistor of the first transistor type, whereinany transistor having its gate electrode formed by the second conductivestructure is of the first transistor type. The at least ten conductivestructures includes a third conductive structure. The third conductivestructure includes a portion that forms a gate electrode of a secondtransistor of the second transistor type, wherein any transistor havingits gate electrode formed by the third conductive structure is of thesecond transistor type. The at least ten conductive structures includesa fourth conductive structure. The fourth conductive structure includesa portion that forms a gate electrode of a third transistor of the firsttransistor type, wherein any transistor having its gate electrode formedby the fourth conductive structure is of the first transistor type. Theat least ten conductive structures includes a fifth conductivestructure. The fifth conductive structure includes a portion that formsa gate electrode of a third transistor of the second transistor type,wherein any transistor having its gate electrode formed by the fifthconductive structure is of the second transistor type. The firsttransistor of the first transistor type includes a first diffusionterminal. The second transistor of the first transistor type includes afirst diffusion terminal. The first diffusion terminal of the firsttransistor of the first transistor type is electrically connected to thefirst diffusion terminal of the second transistor of the firsttransistor type through a first electrical connection. The firsttransistor of the second transistor type includes a first diffusionterminal. The second transistor of the second transistor type includes afirst diffusion terminal. The first diffusion terminal of the firsttransistor of the second transistor type is electrically connected tothe first diffusion terminal of the second transistor of the secondtransistor type through a second electrical connection. The secondtransistor of the first transistor type includes a second diffusionterminal. The third transistor of the first transistor type includes afirst diffusion terminal. The second diffusion terminal of the secondtransistor of the first transistor type is electrically connected to thefirst diffusion terminal of the third transistor of the first transistortype through a third electrical connection. The second transistor of thesecond transistor type includes a second diffusion terminal. The thirdtransistor of the second transistor type includes a first diffusionterminal. The second diffusion terminal of the second transistor of thesecond transistor type is electrically connected to the first diffusionterminal of the third transistor of the second transistor type through afourth electrical connection. The third transistor of the firsttransistor type includes a second diffusion terminal electricallyconnected to a first diffusion terminal of a fourth transistor of thefirst transistor type through a fifth electrical connection. The thirdtransistor of the second transistor type includes a second diffusionterminal electrically connected to a first diffusion terminal of afourth transistor of the second transistor type through a sixthelectrical connection. The third electrical connection is electricallyconnected to the fourth electrical connection through a seventhelectrical connection. The gate electrode of the second transistor ofthe first transistor type is electrically connected to the gateelectrode of the third transistor of the second transistor type throughan eighth electrical connection. The gate electrode of the thirdtransistor of the first transistor type is electrically connected to thegate electrode of the second transistor of the second transistor typethrough a ninth electrical connection. Each transistor of the firsttransistor type having its gate electrode formed by any of the at leastten conductive structures is included in a first collection oftransistors. Each transistor of the second transistor type having itsgate electrode formed by any of the at least ten conductive structuresis included in a second collection of transistors. The first collectionof transistors is separated from the second collection of transistors byan inner sub-region of the region. The inner sub-region does not includea source or a drain of any transistor.

Other aspects and advantages of the invention will become more apparentfrom the following detailed description, taken in conjunction with theaccompanying drawings, illustrating by way of example the presentinvention.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is an illustration showing a number of neighboring layoutfeatures and a representation of light intensity used to render each ofthe layout features, in accordance with one embodiment of the presentinvention;

FIG. 2 is an illustration showing a generalized stack of layers used todefine a dynamic array architecture, in accordance with one embodimentof the present invention;

FIG. 3A is an illustration showing an exemplary base grid to beprojected onto the dynamic array to facilitate definition of therestricted topology, in accordance with one embodiment of the presentinvention;

FIG. 3B is an illustration showing separate base grids projected acrossseparate regions of the die, in accordance with an exemplary embodimentof the present invention;

FIG. 3C is an illustration showing an exemplary linear-shaped featuredefined to be compatible with the dynamic array, in accordance with oneembodiment of the present invention;

FIG. 3D is an illustration showing another exemplary linear-shapedfeature defined to be compatible with the dynamic array, in accordancewith one embodiment of the present invention;

FIG. 4 is an illustration showing a diffusion layer layout of anexemplary dynamic array, in accordance with one embodiment of thepresent invention;

FIG. 5 is an illustration showing a gate electrode layer and a diffusioncontact layer above and adjacent to the diffusion layer of FIG. 4, inaccordance with one embodiment of the present invention;

FIG. 6 is an illustration showing a gate electrode contact layer definedabove and adjacent to the gate electrode layer of FIG. 5, in accordancewith one embodiment of the present invention;

FIGS. 6A-6E show annotated versions of FIG. 6;

FIG. 7A is an illustration showing a traditional approach for makingcontact to the gate electrode;

FIG. 7B is an illustration showing a gate electrode contact defined inaccordance with one embodiment of the present invention;

FIG. 8A is an illustration showing a metal 1 layer defined above andadjacent to the gate electrode contact layer of FIG. 6, in accordancewith one embodiment of the present invention;

FIG. 8B is an illustration showing the metal 1 layer of FIG. 8A withlarger track widths for the metal 1 ground and power tracks, relative tothe other metal 1 tracks;

FIG. 9 is an illustration showing a via 1 layer defined above andadjacent to the metal 1 layer of FIG. 8A, in accordance with oneembodiment of the present invention;

FIG. 10 is an illustration showing a metal 2 layer defined above andadjacent to the via 1 layer of FIG. 9, in accordance with one embodimentof the present invention;

FIG. 11 is an illustration showing conductor tracks traversing thedynamic array in a first diagonal direction relative to the first andsecond reference directions (x) and (y), in accordance with oneembodiment of the present invention;

FIG. 12 is an illustration showing conductor tracks traversing thedynamic array in a second diagonal direction relative to the first andsecond reference directions (x) and (y), in accordance with oneembodiment of the present invention;

FIG. 13A is an illustration showing an example of a sub-resolutioncontact layout used to lithographically reinforce diffusion contacts andgate electrode contacts, in accordance with one embodiment of thepresent invention;

FIG. 13B is an illustration showing the sub-resolution contact layout ofFIG. 13A with sub-resolution contacts defined to fill the grid to theextent possible, in accordance with one embodiment of the presentinvention;

FIG. 13C is an illustration showing an example of a sub-resolutioncontact layout utilizing various shaped sub-resolution contacts, inaccordance with one embodiment of the present invention;

FIG. 13D is an illustration showing an exemplary implementation ofalternate phase shift masking (APSM) with sub-resolution contacts, inaccordance with one embodiment of the present invention;

FIG. 14 is an illustration showing a semiconductor chip structure, inaccordance with one embodiment of the present invention;

FIG. 14A shows an annotated version of FIG. 14;

FIG. 15 shows an example layout architecture defined in accordance withone embodiment of the present invention; and

FIG. 15A shows an annotated version of FIG. 15.

DETAILED DESCRIPTION

In the following description, numerous specific details are set forth inorder to provide a thorough understanding of the present invention. Itwill be apparent, however, to one skilled in the art that the presentinvention may be practiced without some or all of these specificdetails. In other instances, well known process operations have not beendescribed in detail in order not to unnecessarily obscure the presentinvention.

Generally speaking, a dynamic array architecture is provided to addresssemiconductor manufacturing process variability associated with acontinually increasing lithographic gap. In the area of semiconductormanufacturing, lithographic gap is defined as the difference between theminimum size of a feature to be defined and the wavelength of light usedto render the feature in the lithographic process, wherein the featuresize is less than the wavelength of the light. Current lithographicprocesses utilize a light wavelength of 193 nm. However, current featuresizes are as small as 65 nm and are expected to soon approach sizes assmall as 45 nm. With a size of 65 nm, the shapes are three times smallerthan the wavelength of the light used to define the shapes. Also,considering that the interaction radius of light is about five lightwavelengths, it should be appreciated that shapes exposed with a 193 nmlight source will influence the exposure of shapes approximately 5*193nm (965 nm) away. When considering the 65 nm sized features with respectto 90 nm sized features, it should be appreciated that approximately twotimes as many 65 nm sizes features may be within the 965 nm interactionradius of the 193 nm light source as compared to the 90 nm sizedfeatures.

Due to the increased number of features within the interaction radius ofthe light source, the extent and complexity of light interferencecontributing to exposure of a given feature is significant.Additionally, the particular shapes associated with the features withinthe interaction radius of the light source weighs heavily on the type oflight interactions that occur. Traditionally, designers were allowed todefine essentially any two-dimensional topology of feature shapes solong as a set of design rules were satisfied. For example, in a givenlayer of the chip, i.e., in a given mask, the designer may have definedtwo-dimensionally varying features having bends that wrap around eachother. When such two-dimensionally varying features are located inneighboring proximity to each other, the light used to expose thefeatures will interact in a complex and generally unpredictable manner.The light interaction becomes increasingly more complex andunpredictable as the feature sizes and relative spacing become smaller.

Traditionally, if a designer follows the established set of designrules, the resulting product will be manufacturable with a specifiedprobability associated with the set of design rules. Otherwise, for adesign that violates the set of design rules, the probability ofsuccessful manufacture of the resulting product is unknown. To addressthe complex light interaction between neighboring two-dimensionallyvarying features, in the interest of successful product manufacturing,the set of design rules is expanded significantly to adequately addressthe possible combinations of two-dimensionally varying features. Thisexpanded set of design rules quickly becomes so complicated and unwieldythat application of the expanded set of design rules becomesprohibitively time consuming, expensive, and prone to error. Forexample, the expanded set of design rules requires complex verification.Also, the expanded set of design rules may not be universally applied.Furthermore, manufacturing yield is not guaranteed even if all designrules are satisfied.

It should be appreciated that accurate prediction of all possible lightinteractions when rendering arbitrarily-shaped two-dimensional featuresis generally not feasible. Moreover, as an alternative to or incombination with expansion of the set of design rules, the set of designrules may also be modified to include increased margin to account forunpredictable light interaction between the neighboringtwo-dimensionally varying features. Because the design rules areestablished in an attempt to cover the random two-dimensional featuretopology, the design rules may incorporate a significant amount ofmargin. While addition of margin in the set of design rules assists withthe layout portions that include the neighboring two-dimensionallyvarying features, such global addition of margin causes other portionsof the layout that do not include the neighboring two-dimensionallyvarying features to be overdesigned, thus leading to decreasedoptimization of chip area utilization and electrical performance.

In view of the foregoing, it should be appreciated that semiconductorproduct yield is reduced as a result of parametric failures that stemfrom variability introduced by design-dependent unconstrained featuretopologies, i.e., arbitrary two-dimensionally varying features disposedin proximity to each other. By way of example, these parametric failuresmay result from failure to accurately print contacts and vias and fromvariability in fabrication processes. The variability in fabricationprocesses may include CMP dishing, layout feature shape distortion dueto photolithography, gate distortion, oxide thickness variability,implant variability, and other fabrication related phenomena. Thedynamic array architecture of the present invention is defined toaddress the above-mentioned semiconductor manufacturing processvariability.

FIG. 1 is an illustration showing a number of neighboring layoutfeatures and a representation of light intensity used to render each ofthe layout features, in accordance with one embodiment of the presentinvention. Specifically, three neighboring linear-shaped layout features(101A-101C) are depicted as being disposed in a substantially parallelrelationship within a given mask layer. The distribution of lightintensity from a layout feature shape is represented by a sinc function.The sinc functions (103A-103C) represent the distribution of lightintensity from each of the layout features (101A-101C, respectively).The neighboring linear-shaped layout features (101A-101C) are spacedapart at locations corresponding to peaks of the sinc functions(103A-103C). Thus, constructive interference between the light energyassociated with the neighboring layout features (101A-101C), i.e., atthe peaks of the sine functions (103A-103C), serves to reinforce theexposure of the neighboring shapes (101A-101C) for the layout featurespacing illustrated. In accordance with the foregoing, the lightinteraction represented in FIG. 1 represents a synchronous case.

As illustrated in FIG. 1, when linear-shaped layout features are definedin a regular repeating pattern at an appropriate spacing, constructiveinterference of the light energy associated with the various layoutfeatures serves to enhance the exposure of each layout feature. Theenhanced exposure of the layout features provided by the constructivelight interference can dramatically reduce or even eliminate a need toutilize optical proximity correction (OPC) and/or reticle enhancementtechnology (RET) to obtain sufficient rendering of the layout features.

A forbidden pitch, i.e., forbidden layout feature spacing, occurs whenthe neighboring layout features (101A-101C) are spaced such that peaksof the sinc function associated with one layout feature align withvalleys of the sinc function associated with another layout feature,thus causing destructive interference of the light energy. Thedestructive interference of the light energy causes the light energyfocused at a given location to be reduced. Therefore, to realize thebeneficial constructive light interference associated with neighboringlayout features, it is necessary to predict the layout feature spacingat which the constructive overlap of the sinc function peaks will occur.Predictable constructive overlap of the sinc function peaks andcorresponding layout feature shape enhancement can be realized if thelayout feature shapes are rectangular, near the same size, and areoriented in the same direction, as illustrated by the layout features(101A-101C) in FIG. 1. In this manner, resonant light energy fromneighboring layout feature shapes is used to enhance the exposure of aparticular layout feature shape.

FIG. 2 is an illustration showing a generalized stack of layers used todefine a dynamic array architecture, in accordance with one embodimentof the present invention. It should be appreciated that the generalizedstack of layers used to define the dynamic array architecture, asdescribed with respect to FIG. 2, is not intended to represent anexhaustive description of the CMOS manufacturing process. However, thedynamic array is to be built in accordance with standard CMOSmanufacturing processes. Generally speaking, the dynamic arrayarchitecture includes both the definition of the underlying structure ofthe dynamic array and the techniques for assembling the dynamic arrayfor optimization of area utilization and manufacturability. Thus, thedynamic array is designed to optimize semiconductor manufacturingcapabilities.

With regard to the definition of the underlying structure of the dynamicarray, the dynamic array is built-up in a layered manner upon a basesubstrate 201, e.g., upon a silicon substrate, or silicon-on-insulator(SOI) substrate. Diffusion regions 203 are defined in the base substrate201. The diffusion regions 203 represent selected regions of the basesubstrate 201 within which impurities are introduced for the purpose ofmodifying the electrical properties of the base substrate 201. Above thediffusion regions 203, diffusion contacts 205 are defined to enableconnection between the diffusion regions 203 and conductor lines. Forexample, the diffusion contacts 205 are defined to enable connectionbetween source and drain diffusion regions 203 and their respectiveconductor nets. Also, gate electrode features 207 are defined above thediffusion regions 203 to form transistor gates. Gate electrode contacts209 are defined to enable connection between the gate electrode features207 and conductor lines. For example, the gate electrode contacts 209are defined to enable connection between transistor gates and theirrespective conductor nets.

Interconnect layers are defined above the diffusion contact 205 layerand the gate electrode contact layer 209. The interconnect layersinclude a first metal (metal 1) layer 211, a first via (via 1) layer213, a second metal (metal 2) layer 215, a second via (via 2) layer 217,a third metal (metal 3) layer 219, a third via (via 3) layer 221, and afourth metal (metal 4) layer 223. The metal and via layers enabledefinition of the desired circuit connectivity. For example, the metaland via layers enable electrical connection of the various diffusioncontacts 205 and gate electrode contacts 209 such that the logicfunction of the circuitry is realized. It should be appreciated that thedynamic array architecture is not limited to a specific number ofinterconnect layers, i.e., metal and via layers. In one embodiment, thedynamic array may include additional interconnect layers 225, beyond thefourth metal (metal 4) layer 223. Alternatively, in another embodiment,the dynamic array may include less than four metal layers.

The dynamic array is defined such that layers (other than the diffusionregion layer 203) are restricted with regard to layout feature shapesthat can be defined therein. Specifically, in each layer other than thediffusion region layer 203, only linear-shaped layout features areallowed. A linear-shaped layout feature in a given layer ischaracterized as having a consistent vertical cross-section shape andextending in a single direction over the substrate. Thus, thelinear-shaped layout features define structures that areone-dimensionally varying. The diffusion regions 203 are not required tobe one-dimensionally varying, although they are allowed to be ifnecessary. Specifically, the diffusion regions 203 within the substratecan be defined to have any two-dimensionally varying shape with respectto a plane coincident with a top surface of the substrate. In oneembodiment, the number of diffusion bend topologies is limited such thatthe interaction between the bend in diffusion and the conductivematerial, e.g., polysilicon, that forms the gate electrode of thetransistor is predictable and can be accurately modeled. Thelinear-shaped layout features in a given layer are positioned to beparallel with respect to each other. Thus, the linear-shaped layoutfeatures in a given layer extend in a common direction over thesubstrate and parallel with the substrate.

The underlying layout methodology of the dynamic array uses constructivelight interference of light waves in the lithographic process toreinforce exposure of neighboring shapes in a given layer. Therefore,the spacing of the parallel, linear-shaped layout features in a givenlayer is designed around the constructive light interference of thestanding light waves such that lithographic correction (e.g., OPC/RET)is minimized or eliminated. Thus, in contrast to conventionalOPC/RET-based lithographic processes, the dynamic array defined hereinexploits the light interaction between neighboring features, rather thanattempting to compensate for the light interaction between neighboringfeatures.

Because the standing light wave for a given linear-shaped layout featurecan be accurately modeled, it is possible to predict how the standinglight waves associated with the neighboring linear-shaped layoutfeatures disposed in parallel in a given layer will interact. Therefore,it is possible to predict how the standing light wave used to expose onelinear-shaped feature will contribute to the exposure of its neighboringlinear-shaped features. Prediction of the light interaction betweenneighboring linear-shaped features enables the identification of anoptimum feature-to-feature spacing such that light used to render agiven shape will reinforce its neighboring shapes. Thefeature-to-feature spacing in a given layer is defined as the featurepitch, wherein the pitch is the center-to-center separation distancebetween adjacent linear-shaped features in a given layer.

To provide the desired exposure reinforcement between neighboringfeatures, the linear-shaped layout features in a given layer are spacedsuch that constructive and destructive interference of the light fromneighboring features will be optimized to produce the best rendering ofall features in the neighborhood. The feature-to-feature spacing in agiven layer is proportional to the wavelength of the light used toexpose the features. The light used to expose each feature within abouta five light wavelength distance from a given feature will serve toenhance the exposure of the given feature to some extent. Theexploitation of constructive interference of the standing light wavesused to expose neighboring features enables the manufacturing equipmentcapability to be maximized and not be limited by concerns regardinglight interactions during the lithography process.

As discussed above, the dynamic array incorporates a restricted topologyin which the features within each layer (other than diffusion) arerequired to be linear-shaped features that are oriented in a parallelmanner to traverse over the substrate in a common direction. With therestricted topology of the dynamic array, the light interaction in thephotolithography process can be optimized such that the printed image onthe mask is essentially identical to the drawn shape in the layout,i.e., essentially a 100% accurate transfer of the layout onto the resistis achieved.

FIG. 3A is an illustration showing an exemplary base grid to beprojected onto the dynamic array to facilitate definition of therestricted topology, in accordance with one embodiment of the presentinvention. The base grid can be used to facilitate parallel placement ofthe linear-shaped features in each layer of the dynamic array at theappropriate optimized pitch. Although not physically defined as part ofthe dynamic array, the base grid can be considered as a projection oneach layer of the dynamic array. Also, it should be understood that thebase grid is projected in a substantially consistent manner with respectto position on each layer of the dynamic array, thus facilitatingaccurate feature stacking and alignment.

In the exemplary embodiment of FIG. 3A, the base grid is defined as arectangular grid, i.e., Cartesian grid, in accordance with a firstreference direction (x) and a second reference direction (y). Thegridpoint-to-gridpoint spacing in the first and second referencedirections can be defined as necessary to enable definition of thelinear-shaped features at the optimized feature-to-feature spacing.Also, the gridpoint spacing in the first reference direction (x) can bedifferent than the gridpoint spacing in the second reference direction(y). In one embodiment, a single base grid is projected across theentire die to enable location of the various linear-shaped features ineach layer across the entire die. However, in other embodiments,separate base grids can be projected across separate regions of the dieto support different feature-to-feature spacing requirements within theseparate regions of the die. FIG. 3B is an illustration showing separatebase grids projected across separate regions of the die, in accordancewith an exemplary embodiment of the present invention.

The base grid is defined with consideration for the light interactionfunction, i.e., the sinc function, and the manufacturing capability,wherein the manufacturing capability is defined by the manufacturingequipment and processes to be utilized in fabricating the dynamic array.With regard to the light interaction function, the base grid is definedsuch that the spacing between gridpoints enables alignment of peaks inthe sinc functions describing the light energy projected uponneighboring gridpoints. Therefore, linear-shaped features optimized forlithographic reinforcement can be specified by drawing a line from afirst gridpoint to a second gridpoint, wherein the line represents arectangular structure of a given width. It should be appreciated thatthe various linear-shaped features in each layer can be specifiedaccording to their endpoint locations on the base grid and their width.

FIG. 3C is an illustration showing an exemplary linear-shaped feature301 defined to be compatible with the dynamic array, in accordance withone embodiment of the present invention. The linear-shaped feature 301has a substantially rectangular cross-section defined by a width 303 anda height 307. The linear-shaped feature 301 extends in a lineardirection to a length 305. In one embodiment, a cross-section of thelinear-shaped feature, as defined by its width 303 and height 307, issubstantially uniform along its length 305. It should be understood,however, that lithographic effects may cause a rounding of the ends ofthe linear-shaped feature 301. The first and second reference directions(x) and (y), respectively, of FIG. 3A are shown to illustrate anexemplary orientation of the linear-shaped feature on the dynamic array.It should be appreciated that the linear-shaped feature may be orientedto have its length 305 extend in either the first reference direction(x), the second reference direction (y), or in diagonal directiondefined relative to the first and second reference directions (x) and(y). Regardless of the linear-shaped features' particular orientationwith respect to the first and second reference directions (x) and (y),it should be understood that the linear-shaped feature is defined in aplane that is substantially parallel to a top surface of the substrateupon which the dynamic array is built. Also, it should be understoodthat the linear-shaped feature is free of bends, i.e., change indirection, in the plane defined by the first and second referencedirections.

FIG. 3D is an illustration showing another exemplary linear-shapedfeature 317 defined to be compatible with the dynamic array, inaccordance with one embodiment of the present invention. Thelinear-shaped feature 317 has a trapezoidal cross-section defined by alower width 313, an upper width 315, and a height 309. The linear-shapedfeature 317 extends in a linear direction to a length 311. In oneembodiment, the cross-section of the linear-shaped feature 317 issubstantially uniform along its length 311. It should be understood,however, that lithographic effects may cause a rounding of the ends ofthe linear-shaped feature 317. The first and second reference directions(x) and (y), respectively, of FIG. 3A are shown to illustrate anexemplary orientation of the linear-shaped feature on the dynamic array.It should be appreciated that the linear-shaped feature 317 may beoriented to have its length 311 extend in either the first referencedirection (x), the second reference direction (y), or in diagonaldirection defined relative to the first and second reference directions(x) and (y). Regardless of the particular orientation of thelinear-shaped feature 317 with regard to the first and second referencedirections (x) and (y), it should be understood that the linear-shapedfeature 317 is defined in a plane that is substantially parallel to atop surface of the substrate upon which the dynamic array is built.Also, it should be understood that the linear-shaped feature 317 is freeof bends, i.e., change in direction, in the plane defined by the firstand second reference directions.

Although FIGS. 3C and 3D explicitly discuss linear shaped featureshaving rectangular and trapezoidal cross-sections, respectively, itshould be understood that the linear shaped features having other typesof cross-sections can be defined within the dynamic array. Therefore,essentially any suitable cross-sectional shape of the linear-shapedfeature can be utilized so long as the linear-shaped feature is definedto have a length that extends in one direction, and is oriented to haveits length extend in either the first reference direction (x), thesecond reference direction (y), or in diagonal direction definedrelative to the first and second reference directions (x) and (y).

The layout architecture of the dynamic array follows the base gridpattern. Thus, it is possible to use grid points to represent wherechanges in direction occur in diffusion, wherein gate electrode andmetal linear-shaped features are placed, where contacts are placed,where opens are in the linear-shaped gate electrode and metal features,etc. The pitch of the gridpoints, i.e., the gridpoint-to-gridpointspacing, should be set for a given feature line width, e.g., width 303in FIG. 3C, such that exposure of neighboring linear-shaped features ofthe given feature line width will reinforce each other, wherein thelinear-shaped features are centered on gridpoints. With reference to thedynamic array stack of FIG. 2 and the exemplary base grid of FIG. 3A, inone embodiment, the gridpoint spacing in the first reference direction(x) is set by the required gate electrode gate pitch. In this sameembodiment, the gridpoint pitch in the second reference direction (y) isset by the metal 1 and metal 3 pitch. For example, in a 90 nm processtechnology, i.e., minimum feature size equal to 90 nm, the gridpointpitch in the second reference direction (y) is about 0.24 micron. In oneembodiment, metal 1 and metal 2 layers will have a common spacing andpitch. A different spacing and pitch may be used above the metal 2layer.

The various layers of the dynamic array are defined such that thelinear-shaped features in adjacent layers extend in a crosswise mannerwith respect to each other. For example, the linear-shaped features ofadjacent layers may extend orthogonally, i.e., perpendicularly withrespect to each other. Also, the linear-shaped features of one layer mayextend across the linear-shaped features of an adjacent layer at anangle, e.g., at about 45 degrees. For example, in one embodiment thelinear-shaped feature of one layer extend in the first referencedirection (x) and the linear-shaped features of the adjacent layerextend diagonally with respect to the first (x) and second (y) referencedirections. It should be appreciated that to route a design in thedynamic array having the linear-shaped features positioned in thecrosswise manner in adjacent layers, opens can be defined in thelinear-shaped features, and contacts and vias can be defined asnecessary.

The dynamic array minimizes the use of bends in layout shapes toeliminate unpredictable lithographic interactions. Specifically, priorto OPC or other RET processing, the dynamic array allows bends in thediffusion layer to enable control of device sizes, but does not allowbends in layers above the diffusion layer. The layout features in eachlayer above the diffusion layer are linear in shape, e.g., FIG. 3C, anddisposed in a parallel relationship with respect to each other. Thelinear shapes and parallel positioning of layout features areimplemented in each stack layer of the dynamic array wherepredictability of constructive light interference is necessary to ensuremanufacturability. In one embodiment, the linear shapes and parallelpositioning of layout features are implemented in the dynamic array ineach layer above diffusion through metal 2. Above metal 2, the layoutfeatures may be of sufficient size and shape that constructive lightinterference is not required to ensure manufacturability. However, thepresence of constructive light interference in patterning layoutfeatures above metal 2 may be beneficial.

An exemplary buildup of dynamic array layers from diffusion throughmetal 2 are described with respect to FIGS. 4 through 14. It should beappreciated that the dynamic array described with respect to FIGS. 4through 14 is provided by way of example only, and is not intended toconvey limitations of the dynamic array architecture. The dynamic arraycan be used in accordance with the principles presented herein to defineessentially any integrated circuit design.

FIG. 4 is an illustration showing a diffusion layer layout of anexemplary dynamic array, in accordance with one embodiment of thepresent invention. The diffusion layer of FIG. 4 shows a p-diffusionregion 401 and an n-diffusion region 403. While the diffusion regionsare defined according to the underlying base grid, the diffusion regionsare not subject to the linear-shaped feature restrictions associatedwith the layers above the diffusion layer. The diffusion regions 401 and403 include diffusion squares 405 defined where diffusion contacts willbe located. The diffusion regions 401 and 403 do not include extraneousjogs or corners, thus improving the use of lithographic resolution andenabling more accurate device extraction. Additionally, n+ mask regions(412 and 416) and p+ mask regions (410 and 414) are defined asrectangles on the (x), (y) grid with no extraneous jogs or notches. Thisstyle permits use of larger diffusion regions, eliminates need forOPC/RET, and enables use of lower resolution and lower cost lithographicsystems, e.g., i-line illumination at 365 nm. It should be appreciatedthat the n+ mask region 416 and the p+ mask region 410, as depicted inFIG. 4, are for an embodiment that does not employ well-biasing. In analternative embodiment where well-biasing is to be used, the n+ maskregion 416 shown in FIG. 4 will actually be defined as a p+ mask region.Also, in this alternative embodiment, the p+ mask region 410 shown inFIG. 4 will actually be defined as a n+ mask region.

FIG. 5 is an illustration showing a gate electrode layer and a diffusioncontact layer above and adjacent to the diffusion layer of FIG. 4, inaccordance with one embodiment of the present invention. As thoseskilled in the CMOS arts will appreciate, the gate electrode features501 define the transistor gates. The gate electrode features 501 aredefined as linear shaped features extending in a parallel relationshipacross the dynamic array in the second reference direction (y). In oneembodiment, the gate electrode features 501 are defined to have a commonwidth. However, in another embodiment, one or more of the gate electrodefeatures can be defined to have a different width. For example, FIG. 5shows a gate electrode features 501A that has a larger width relative tothe other gate electrode features 501. The pitch (center-to-centerspacing) of the gate electrode features 501 is minimized while ensuringoptimization of lithographic reinforcement, i.e., resonant imaging,provided by neighboring gate electrode features 501. For discussionpurposes, gate electrode features 501 extending across the dynamic arrayin a given line are referred to as a gate electrode track.

The gate electrode features 501 form n-channel and p-channel transistorsas they cross the diffusion regions 403 and 401, respectively. Optimalgate electrode feature 501 printing is achieved by drawing gateelectrode features 501 at every grid location, even though no diffusionregion may be present at some grid locations. Also, long continuous gateelectrode features 501 tend to improve line end shortening effects atthe ends of gate electrode features within the interior of the dynamicarray. Additionally, gate electrode printing is significantly improvedwhen all bends are removed from the gate electrode features 501.

Each of the gate electrode tracks may be interrupted, i.e., broken, anynumber of times in linearly traversing across the dynamic array in orderto provide required electrical connectivity for a particular logicfunction to be implemented. When a given gate electrode track isrequired to be interrupted, the separation between ends of the gateelectrode track segments at the point of interruption is minimized tothe extent possible taking into consideration the manufacturingcapability and electrical effects. In one embodiment, optimalmanufacturability is achieved when a common end-to-end spacing is usedbetween features within a particular layer.

Minimizing the separation between ends of the gate electrode tracksegments at the points of interruption serves to maximize thelithographic reinforcement, and uniformity thereof, provided fromneighboring gate electrode tracks. Also, in one embodiment, if adjacentgate electrode tracks need to be interrupted, the interruptions of theadjacent gate electrode tracks are made such that the respective pointsof interruption are offset from each other so as to avoid, to the extentpossible, an occurrence of neighboring points of interruption. Morespecifically, points of interruption within adjacent gate electrodetracks are respectively positioned such that a line of sight does notexist through the points of interruption, wherein the line of sight isconsidered to extend perpendicularly to the direction in which the gateelectrode tracks extend over the substrate. Additionally, in oneembodiment, the gate electrodes may extend through the boundaries at thetop and bottom of the cells, i.e., the PMOS or NMOS cells. Thisembodiment would enable bridging of neighboring cells.

With further regard to FIG. 5, diffusion contacts 503 are defined ateach diffusion square 405 to enhance the printing of diffusion contactsvia resonant imaging. The diffusion squares 405 are present around everydiffusion contact 503 to enhance the printing of the power and groundconnection polygons at the diffusion contacts 503.

The gate electrode features 501 and diffusion contacts 503 share acommon grid spacing. More specifically, the gate electrode feature 501placement is offset by one-half the grid spacing relative to thediffusion contacts 503. For example, if the gate electrode features 501and diffusion contact 503 grid spacing is 0.36 μm, then the diffusioncontacts are placed such that the x-coordinate of their center falls onan integer multiple of 0.36 μm, while the x-coordinate of the center ofeach gate electrode feature 501 minus 0.18 μm should be an integermultiple of 0.36 μm. In the present example, the x-coordinates arerepresented by the following:

-   -   Diffusion contact center x-coordinate=I*0.36 μm, where I is the        grid number;    -   Gate electrode feature center x-coordinate=0.18 μm+I*0.36 μm,        where I is the grid number.

The grid based system of the dynamic array ensures that all contacts(diffusion and gate electrode) will land on a horizontal grid that isequal to a multiple of one-half of the diffusion contact grid and avertical grid that is set by the metal 1 pitch. In the example above,the gate electrode feature and diffusion contact grid is 0.36 μm. Thediffusion contacts and gate electrode contacts will land on a horizontalgrid that is a multiple of 0.18 μm. Also, the vertical grid for 90 nmprocess technologies is about 0.24 μm.

FIG. 6 is an illustration showing a gate electrode contact layer definedabove and adjacent to the gate electrode layer of FIG. 5, in accordancewith one embodiment of the present invention. In the gate electrodecontact layer, gate electrode contacts 601 are drawn to enableconnection of the gate electrode features 501 to the overlying metalconduction lines. In general, design rules will dictate the optimumplacement of the gate electrode contacts 601. In one embodiment, thegate electrode contacts are drawn on top of the transistor endcapregions. This embodiment minimizes white space in the dynamic array whendesign rules specify long transistor endcaps. In some processtechnologies white space may be minimized by placing a number of gateelectrode contacts for a cell in the center of the cell. Also, it shouldbe appreciated that in the present invention, the gate electrode contact601 is oversized in the direction perpendicular to the gate electrodefeature 501 to ensure overlap between the gate electrode contact 601 andthe gate electrode feature 501.

FIG. 6A shows an annotated version of FIG. 6. The features depicted inFIG. 6A are exactly the same as the features depicted in FIG. 6. FIG. 6Ashows a first conductive gate level structure 501 a having a lengthwisecenterline 6 a 01. FIG. 6A shows a second conductive gate levelstructure 501 b and a third conductive gate level structure 501 c havinga lengthwise centerline 6 a 03. FIG. 6A shows a fourth conductive gatelevel structure 501 d and a fifth conductive gate level structure 501 ehaving the lengthwise centerline 6 a 05. FIG. 6A shows a sixthconductive gate level structure 501 f having a lengthwise centerline 6 a07. FIG. 6A shows a seventh conductive gate level structure 501 g havinga lengthwise centerline 6 a 09. FIG. 6A shows an eighth conductive gatelevel structure 501 h having a lengthwise centerline 6 a 11.

FIG. 6A shows the first conductive gate level structure 501 a separatedfrom each of the second conductive gate level structure 501 b and thirdconductive gate level structure 501 c by a centerline-to-centerlinespacing 6 a 13 as measured in a direction perpendicular to the paralleldirection of the gate level structures. FIG. 6A shows the secondconductive gate level structure 501 b separated from the fourthconductive gate level structure 501 d by a centerline-to-centerlinespacing 6 a 15 as measured in the direction perpendicular to theparallel direction of the gate level structures. FIG. 6A shows the thirdconductive gate level structure 501 c separated from the fifthconductive gate level structure 501 e by a centerline-to-centerlinespacing 6 a 15 as measured in the direction perpendicular to theparallel direction of the gate level structures. FIG. 6A shows the sixthconductive gate level structure 501 f separated from each of the fourthconductive gate level structure 501 d and fifth conductive gate levelstructure 501 e by a centerline-to-centerline spacing 6 a 17 as measuredin the direction perpendicular to the parallel direction of the gatelevel structures. FIG. 6A shows the sixth conductive gate levelstructure 501 f separated from the seventh conductive gate levelstructure 501 g by a centerline-to-centerline spacing 6 a 19 as measuredin the direction perpendicular to the parallel direction of the gatelevel structures. FIG. 6A shows the seventh conductive gate levelstructure 501 g separated from the eighth conductive gate levelstructure 501 h by a centerline-to-centerline spacing 6 a 21 as measuredin the direction perpendicular to the parallel direction of the gatelevel structures.

FIG. 6A shows the first conductive gate level structure 501 a forming agate electrode of a transistor 6 a 47 of a first transistor type and agate electrode of a transistor 6 a 37 of a second transistor type. FIG.6A shows the second conductive gate level structure 501 b forming a gateelectrode of a transistor 6 a 49 of the first transistor type. FIG. 6Ashows the third conductive gate level structure 501 c forming a gateelectrode of a transistor 6 a 39 of the second transistor type. FIG. 6Ashows the fourth conductive gate level structure 501 d forming a gateelectrode of a transistor 6 a 51 of the first transistor type. FIG. 6Ashows the fifth conductive gate level structure 501 e forming a gateelectrode of a transistor 6 a 41 of the second transistor type. FIG. 6Ashows the sixth conductive gate level structure 501 f forming a gateelectrode of a transistor 6 a 53 of the first transistor type and a gateelectrode of a transistor 6 a 43 of the second transistor type. FIG. 6Ashows the seventh conductive gate level structure 501 g not forming agate electrode of a transistor. FIG. 6A shows the eighth conductive gatelevel structure 501 h forming a gate electrode of a transistor 6 a 55 ofthe first transistor type and a gate electrode of a transistor 6 a 45 ofthe second transistor type.

FIG. 6A shows the contact 601 a connected to the first conductive gatelevel structure 501 a. FIG. 6A shows the contact 601 b connected to thesecond conductive gate level structure 501 b. FIG. 6A shows the contact601 c connected to the third conductive gate level structure 501 c. FIG.6A shows the contact 601 d connected to the fourth conductive gate levelstructure 501 d. FIG. 6A shows the contact 601 e connected to the fifthconductive gate level structure 501 e. FIG. 6A shows the contact 601 fconnected to the sixth conductive gate level structure 501 f.

FIG. 6A shows the contact 601 b positioned to contact the secondconductive gate level structure 501 b at a contact-to-gate distance 6 a25 from a gate electrode of the transistor 6 a 49. FIG. 6A shows thecontact 601 c positioned to contact the third conductive gate levelstructure 501 c at a contact-to-gate distance 6 a 27 from a gateelectrode of the transistor 6 a 39. FIG. 6A shows the contact 601 dpositioned to contact the fourth conductive gate level structure 501 dat a contact-to-gate distance 6 a 23 from a gate electrode of thetransistor 6 a 51. FIG. 6A shows the contact 601 e positioned to contactthe fifth conductive gate level structure 501 e at a contact-to-gatedistance 6 a 29 from a gate electrode of the transistor 6 a 41.

FIG. 6B shows an annotated version of FIG. 6. The features depicted inFIG. 6B are exactly the same as the features depicted in FIG. 6. FIG. 6Bshows the contact 601 b located at a contact position 6 a 31 in theparallel direction of the conductive gate level structures, i.e., in they direction. FIG. 6B shows the contact 601 c and the contact 601 dlocated at a contact position 6 a 33 in the parallel direction of theconductive gate level structures. FIG. 6B shows the contact 601 elocated at a contact position 6 a 35 in the parallel direction of theconductive gate level structures. FIG. 6B shows the contacts 601 b and601 e positioned outside the diffusion regions 401 and 403 of differentdiffusion region types. FIG. 6B shows the contacts 601 c and 601 dpositioned between the diffusion regions 401 and 403 of differentdiffusion region types, i.e., positioned over the inner non-diffusionregion between the diffusion regions 401 and 403 of different diffusionregion types.

FIG. 6C shows an annotated version of FIG. 6. The features depicted inFIG. 6C are exactly the same as the features depicted in FIG. 6. FIG. 6Cshows the second conductive gate level structure 501 b extending adistance 6 a 57 beyond the contact 601 b in the parallel direction(y-direction) away from the gate electrode of the transistor 6 a 49.FIG. 6C shows the third conductive gate level structure 501 c extendinga distance 6 a 59 beyond the contact 601 c in the parallel direction(y-direction) away from the gate electrode of the transistor 6 a 39.FIG. 6C shows the fourth conductive gate level structure 501 d extendinga distance 6 a 61 beyond the contact 601 d in the parallel direction(y-direction) away from the gate electrode of the transistor 6 a 51.FIG. 6C shows the fifth conductive gate level structure 501 e extendinga distance 6 a 63 beyond the contact 601 e in the parallel direction(y-direction) away from the gate electrode of the transistor 6 a 41.

FIG. 6D shows an annotated version of FIG. 6. The features depicted inFIG. 6D are exactly the same as the features depicted in FIG. 6. FIG. 6Dshows the first conductive gate level structure 501 a defined to have alength 6 a 89 as measured in the parallel direction (y-direction). FIG.6D shows the second conductive gate level structure 501 b defined tohave a length 6 a 93 as measured in the parallel direction(y-direction). FIG. 6D shows the third conductive gate level structure501 c defined to have a length 6 a 91 as measured in the paralleldirection (y-direction). FIG. 6D shows the fourth conductive gate levelstructure 501 d defined to have a length 6 a 97 as measured in theparallel direction (y-direction). FIG. 6D shows the fifth conductivegate level structure 501 e defined to have a length 6 a 95 as measuredin the parallel direction (y-direction). FIG. 6D shows the sixthconductive gate level structure 501 f defined to have a length 6 a 99 asmeasured in the parallel direction (y-direction). FIG. 6D shows theseventh conductive gate level structure 501 g defined to have a length 6a 101 as measured in the parallel direction (y-direction). FIG. 6D showsthe eighth conductive gate level structure 501 h defined to have alength 6 a 103 as measured in the parallel direction (y-direction).

FIG. 6D shows the second conductive gate level structure 501 bpositioned in a spaced apart end-to-end manner with the third conductivegate level structure 501 c. FIG. 6D shows the second conductive gatelevel structure 501 b separated from the third conductive gate levelstructure 501 c by a first end-to-end spacing 6 a 85 as measured in theparallel direction (y-direction). FIG. 6D shows the fourth conductivegate level structure 501 d positioned in a spaced apart end-to-endmanner with the fifth conductive gate level structure 501 e. FIG. 6Dshows the fourth conductive gate level structure 501 d separated fromthe fifth conductive gate level structure 501 e by a second end-to-endspacing 6 a 87 as measured in the parallel direction (y-direction). FIG.6D shows the first end-to-end spacing 6 a 85 positioned over the innernon-diffusion region between the two diffusion regions 401 and 403 ofdifferent diffusion types.

FIG. 6D shows the second end-to-end spacing 6 a 87 positioned over theinner non-diffusion region between the two diffusion regions 401 and 403of different diffusion types. FIG. 6D shows the first end-to-end spacing6 a 85 offset in the parallel direction (y-direction) from the secondend-to-end spacing 6 a 87.

FIG. 6D shows the first, second, fourth, sixth, seventh, and eighthconductive gate level structures 501 a, 501 b, 501 d, 501 f, 501 g, 501h, respectively, each having an end aligned with a first common position6 a 81 in the parallel direction (y-direction). FIG. 6D shows the first,third, fifth, sixth, seventh, and eighth conductive gate levelstructures 501 a, 501 c, 501 e, 501 f, 501 g, 501 h, respectively, eachhaving an end aligned with a second common position 6 a 83 in theparallel direction (y-direction).

FIG. 6E shows an annotated version of FIG. 6. The features depicted inFIG. 6E are exactly the same as the features depicted in FIG. 6. FIG. 6Eshows the second conductive gate level feature 501 b having an outerextension distance 6 a 105 as measured in the parallel direction(y-direction) away from the gate electrode of the transistor 6 a 49 andaway from the transistor 6 a 39. FIG. 6E shows the second conductivegate level feature 501 b having an inner extension distance 6 a 107 asmeasured in the parallel direction (y-direction) away from the gateelectrode of the transistor 6 a 49 and toward the transistor 6 a 39.FIG. 6E shows the third conductive gate level feature 501 c having anouter extension distance 6 a 111 as measured in the parallel direction(y-direction) away from the gate electrode of the transistor 6 a 39 andaway from the transistor 6 a 49. FIG. 6E shows the third conductive gatelevel feature 501 c having an inner extension distance 6 a 109 asmeasured in the parallel direction (y-direction) away from the gateelectrode of the transistor 6 a 39 and toward the transistor 6 a 49.

FIG. 6E shows the fourth conductive gate level feature 501 d having anouter extension distance 6 a 113 as measured in the parallel direction(y-direction) away from the gate electrode of the transistor 6 a 51 andaway from the transistor 6 a 41. FIG. 6E shows the fourth conductivegate level feature 501 d having an inner extension distance 6 a 115 asmeasured in the parallel direction (y-direction) away from the gateelectrode of the transistor 6 a 51 and toward the transistor 6 a 41.FIG. 6E shows the fifth conductive gate level feature 501 e having anouter extension distance 6 a 119 as measured in the parallel direction(y-direction) away from the gate electrode of the transistor 6 a 41 andaway from the transistor 6 a 51. FIG. 6E shows the fifth conductive gatelevel feature 501 e having an inner extension distance 6 a 117 asmeasured in the parallel direction (y-direction) away from the gateelectrode of the transistor 6 a 41 and toward the transistor 6 a 51.FIG. 7A is an illustration showing a traditional approach for makingcontact to a gate electrode, e.g., polysilicon feature. In thetraditional configuration of FIG. 7A, an enlarged rectangular gateelectrode region 707 is defined where a gate electrode contact 709 is tobe located. The enlarged rectangular gate electrode region 707introduces a bend of distance 705 in the gate electrode. The bendassociated with the enlarged rectangular gate electrode region 707 setsup undesirable light interactions and distorts the gate electrode line711. Distortion of the gate electrode line 711 is especially problematicwhen the gate electrode width is about the same as a transistor length.

FIG. 7B is an illustration showing a gate electrode contact 601, e.g.,polysilicon contact, defined in accordance with one embodiment of thepresent invention. The gate electrode contact 601 is drawn to overlapthe edges of the gate electrode feature 501, and extend in a directionsubstantially perpendicular to the gate electrode feature 501. In oneembodiment, the gate electrode contact 601 is drawn such that thevertical dimension 703 is same as the vertical dimension used for thediffusion contacts 503. For example, if the diffusion contact 503opening is specified to be 0.12 μm square then the vertical dimension ofthe gate electrode contact 601 is drawn at 0.12 μm. However, in otherembodiments, the gate electrode contact 601 can be drawn such that thevertical dimension 703 is different from the vertical dimension used forthe diffusion contacts 503.

In one embodiment, the gate electrode contact 601 extension 701 beyondthe gate electrode feature 501 is set such that maximum overlap isachieved between the gate electrode contact 601 and the gate electrodefeature 501. The extension 701 is defined to accommodate line endshortening of the gate electrode contact 601, and misalignment betweenthe gate electrode contact layer and gate electrode feature layer. Thelength of the gate electrode contact 601 is defined to ensure maximumsurface area contact between the gate electrode contact 601 and the gateelectrode feature 501, wherein the maximum surface area contact isdefined by the width of the gate electrode feature 501.

FIG. 8A is an illustration showing a metal 1 layer defined above thegate electrode contact layer of FIG. 6, in accordance with oneembodiment of the present invention. The metal 1 layer includes a numberof metal 1 tracks 801-821 defined to include linear shaped featuresextending in a parallel relationship across the dynamic array. The metal1 tracks 801-821 extend in a direction substantially perpendicular tothe gate electrode features 501 in the underlying gate electrode layerof FIG. 5. Thus, in the present example, the metal 1 tracks 801-821extend linearly across the dynamic array in the first referencedirection (x). The pitch (center-to-center spacing) of the metal 1tracks 801-821 is minimized while ensuring optimization of lithographicreinforcement, i.e., resonant imaging, provided by neighboring metal 1tracks 801-821. For example, in one embodiment, the metal 1 tracks801-821 are centered on a vertical grid of about 0.24 μm for a 90 nmprocess technology.

Each of the metal 1 tracks 801-821 may be interrupted, i.e., broken, anynumber of times in linearly traversing across the dynamic array in orderto provide required electrical connectivity for a particular logicfunction to be implemented. When a given metal 1 track 801-821 isrequired to be interrupted, the separation between ends of the metal 1track segments at the point of interruption is minimized to the extentpossible taking into consideration manufacturing capability andelectrical effects. Minimizing the separation between ends of the metal1 track segments at the points of interruption serves to maximize thelithographic reinforcement, and uniformity thereof, provided fromneighboring metal 1 tracks. Also, in one embodiment, if adjacent metal 1tracks need to be interrupted, the interruptions of the adjacent metal 1tracks are made such that the respective points of interruption areoffset from each other so as to avoid, to the extent possible, anoccurrence of neighboring points of interruption. More specifically,points of interruption within adjacent metal 1 tracks are respectivelypositioned such that a line of sight does not exist through the pointsof interruption, wherein the line of sight is considered to extendperpendicularly to the direction in which the metal 1 tracks extend overthe substrate.

In the example of FIG. 8A, the metal 1 track 801 is connected to theground supply, and the metal 1 track 821 is connected to the powersupply voltage. In the embodiment of FIG. 8A, the widths of the metal 1tracks 801 and 821 are the same as the other metal 1 tracks 803-819.However, in another embodiment, the widths of metal 1 tracks 801 and 821are larger than the widths of the other metal 1 tracks 803-819. FIG. 8Bis an illustration showing the metal 1 layer of FIG. 8A with largertrack widths for the metal 1 ground and power tracks (801A and 821A),relative to the other metal 1 tracks 803-819.

The metal 1 track pattern is optimally configured to optimize the use of“white space” (space not occupied by transistors). The example of FIG.8A includes the two shared metal 1 power tracks 801 and 821, and ninemetal 1 signal tracks 803-819. Metal 1 tracks 803, 809, 811, and 819 aredefined as gate electrode contact tracks in order to minimize whitespace. Metal 1 tracks 805 and 807 are defined to connect to n-channeltransistor source and drains. Metal 1 tracks 813, 815, and 817 aredefined to connect to p-channel source and drains. Also, any of the ninemetal 1 signal tracks 803-819 can be used as a feed through if noconnection is required. For example, metal 1 tracks 813 and 815 areconfigured as feed through connections.

FIG. 9 is an illustration showing a via 1 layer defined above andadjacent to the metal 1 layer of FIG. 8A, in accordance with oneembodiment of the present invention. Vias 901 are defined in the via 1layer to enable connection of the metal 1 tracks 801-821 to higher levelconduction lines.

FIG. 10 is an illustration showing a metal 2 layer defined above andadjacent to the via 1 layer of FIG. 9, in accordance with one embodimentof the present invention. The metal 2 layer includes a number of metal 2tracks 1001 defined as linear shaped features extending in a parallelrelationship across the dynamic array. The metal 2 tracks 1001 extend ina direction substantially perpendicular to the metal 1 tracks 801-821 inthe underlying metal 1 layer of FIG. 8A, and in a directionsubstantially parallel to the gate electrode tracks 501 in theunderlying gate electrode layer of FIG. 5. Thus, in the present example,the metal 2 tracks 1001 extend linearly across the dynamic array in thesecond reference direction (y).

The pitch (center-to-center spacing) of the metal 2 tracks 1001 isminimized while ensuring optimization of lithographic reinforcement,i.e., resonant imaging, provided by neighboring metal 2 tracks. Itshould be appreciated that regularity can be maintained on higher levelinterconnect layers in the same manner as implemented in the gateelectrode and metal 1 layers. In one embodiment, the gate electrodefeature 501 pitch and the metal 2 track pitch is the same. In anotherembodiment, the contacted gate electrode pitch (e.g.,polysilicon-to-polysilicon space with a diffusion contact in between) isgreater than the metal 2 track pitch. In this embodiment, the metal 2track pitch is optimally set to be ⅔ or ¾ of the contacted gateelectrode pitch. Thus, in this embodiment, the gate electrode track andmetal 2 track align at every two gate electrode track pitches and everythree metal 2 track pitches. For example, in a 90 nm process technology,the optimum contacted gate electrode track pitch is 0.36 μm, and theoptimum metal 2 track pitch is 0.24 μm. In another embodiment, the gateelectrode track and the metal 2 track align at every three gateelectrode pitches and every four metal 2 pitches. For example, in a 90nm process technology, the optimum contacted gate electrode track pitchis 0.36 μm, and the optimum metal 2 track pitch is 0.27 μm.

Each of the metal 2 tracks 1001 may be interrupted, i.e., broken, anynumber of times in linearly traversing across the dynamic array in orderto provide required electrical connectivity for a particular logicfunction to be implemented. When a given metal 2 track 1001 is requiredto be interrupted, the separation between ends of the metal 2 tracksegments at the point of interruption is minimized to the extentpossible taking into consideration manufacturing and electrical effects.Minimizing the separation between ends of the metal 2 track segments atthe points of interruption serves to maximize the lithographicreinforcement, and uniformity thereof, provided from neighboring metal 2tracks. Also, in one embodiment, if adjacent metal 2 tracks need to beinterrupted, the interruptions of the adjacent metal 2 tracks are madesuch that the respective points of interruption are offset from eachother so as to avoid, to the extent possible, an occurrence ofneighboring points of interruption. More specifically, points ofinterruption within adjacent metal 2 tracks are respectively positionedsuch that a line of sight does not exist through the points ofinterruption, wherein the line of sight is considered to extendperpendicularly to the direction in which the metal 2 tracks extend overthe substrate.

As discussed above, the conduction lines in a given metal layer abovethe gate electrode layer may traverse the dynamic array in a directioncoincident with either the first reference direction (x) or the secondreference direction (y). It should be further appreciated that theconduction lines in a given metal layer above the gate electrode layermay traverse the dynamic array in a diagonal direction relative to thefirst and second reference directions (x) and (y). FIG. 11 is anillustration showing conductor tracks 1101 traversing the dynamic arrayin a first diagonal direction relative to the first and second referencedirections (x) and (y), in accordance with one embodiment of the presentinvention. FIG. 12 is an illustration showing conductor tracks 1201traversing the dynamic array in a second diagonal direction relative tothe first and second reference directions (x) and (y), in accordancewith one embodiment of the present invention.

As with the metal 1 and metal 2 tracks discussed above, the diagonaltraversing conductor tracks 1101 and 1201 of FIGS. 11 and 12 may beinterrupted, i.e., broken, any number of times in linearly traversingacross the dynamic array in order to provide required electricalconnectivity for a particular logic function to be implemented. When agiven diagonal traversing conductor track is required to be interrupted,the separation between ends of the diagonal conductor track at the pointof interruption is minimized to the extent possible taking intoconsideration manufacturing and electrical effects. Minimizing theseparation between ends of the diagonal conductor track at the points ofinterruption serves to maximize the lithographic reinforcement, anduniformity thereof, provided from neighboring diagonal conductor tracks.

An optimal layout density within the dynamic array is achieved byimplementing the following design rules:

at least two metal 1 tracks be provided across the n-channel devicearea;

at least two metal 1 tracks be provided across the p-channel devicearea;

at least two gate electrode tracks be provided for the n-channel device;and

at least two gate electrode tracks be provided for the p-channel device.

Contacts and vias are becoming the most difficult mask from alithographic point of view. This is because the contacts and vias aregetting smaller, more closely spaced, and are randomly distributed. Thespacing and density of the cuts (contact or vias) makes it extremelydifficult to reliably print the shapes. For example, cut shapes may beprinted improperly due to destructive interference patterns fromneighboring shapes or lack of energy on lone shapes. If a cut isproperly printed, the manufacturing yield of the associated contact orvia is extremely high. Sub-resolution contacts can be provided toreinforce the exposure of the actual contacts, so long as thesub-resolution contacts do not resolve. Also, the sub-resolutioncontacts can be of any shape so long as they are smaller than theresolution capability of the lithographic process.

FIG. 13A is an illustration showing an example of a sub-resolutioncontact layout used to lithographically reinforce diffusion contacts andgate electrode contacts, in accordance with one embodiment of thepresent invention. Sub-resolution contacts 1301 are drawn such that theyare below the resolution of the lithographic system and will not beprinted. The function of the sub-resolution contacts 1301 is to increasethe light energy at the desired contact locations, e.g., 503, 601,through resonant imaging. In one embodiment, sub-resolution contacts1301 are placed on a grid such that both gate electrode contacts 601 anddiffusion contacts 503 are lithographically reinforced. For example,sub-resolution contacts 1301 are placed on a grid that is equal toone-half the diffusion contact 503 grid spacing to positively impactboth gate electrode contacts 601 and diffusion contacts 503. In oneembodiment, a vertical spacing of the sub-resolution contacts 1301follows the vertical spacing of the gate electrode contacts 601 anddiffusion contacts 503.

Grid location 1303 in FIG. 13A denotes a location between adjacent gateelectrode contacts 601. Depending upon the lithographic parameters inthe manufacturing process, it is possible that a sub-resolution contact1301 at this grid location would create an undesirable bridge betweenthe two adjacent gate electrode contacts 601. If bridging is likely tooccur, a sub-resolution contact 1301 at location 1303 can be omitted.Although FIG. 13A shows an embodiment where sub-resolution contacts areplaced adjacent to actual features to be resolved and not elsewhere, itshould be understood that another embodiment may place a sub-resolutioncontact at each available grid location so as to fill the grid.

FIG. 13B is an illustration showing the sub-resolution contact layout ofFIG. 13A with sub-resolution contacts defined to fill the grid to theextent possible, in accordance with one embodiment of the presentinvention. It should be appreciated that while the embodiment of FIG.13B fills the grid to the extent possible with sub-resolution contacts,placement of sub-resolution contacts is avoided at locations that wouldpotentially cause undesirable bridging between adjacent fully resolvedfeatures.

FIG. 13C is an illustration showing an example of a sub-resolutioncontact layout utilizing various shaped sub-resolution contacts, inaccordance with one embodiment of the present invention. Alternativesub-resolution contact shapes can be utilized so long as thesub-resolution contacts are below the resolution capability of themanufacturing process. FIG. 13C shows the use of “X-shaped”sub-resolution contacts 1305 to focus light energy at the corners of theadjacent contacts. In one embodiment, the ends of the X-shapedsub-resolution contact 1305 are extended to further enhance thedeposition of light energy at the corners of the adjacent contacts.

FIG. 13D is an illustration showing an exemplary implementation ofalternate phase shift masking (APSM) with sub-resolution contacts, inaccordance with one embodiment of the present invention. As in FIG. 13A,sub-resolution contacts are utilized to lithographically reinforcediffusion contacts 503 and gate electrode contacts 601. APSM is used toimprove resolution when neighboring shapes create destructiveinterference patterns. The APSM technique modifies the mask so that thephase of light traveling through the mask on neighboring shapes is 180degrees out of phase. This phase shift serves to remove destructiveinterference and allowing for greater contact density. By way ofexample, contacts in FIG. 13D marked with a plus “+” sign representcontacts exposed with light waves of a first phase while contacts markedwith a minus sign “−” represent contacts exposed with light waves thatare shifted in phase by 180 degrees relative to the first phase used forthe “+” sign contacts. It should be appreciated that the APSM techniqueis utilized to ensure that adjacent contacts are separated from eachother.

As feature sizes decrease, semiconductor dies are capable of includingmore gates. As more gates are included, however, the density of theinterconnect layers begins to dictate the die size. This increasingdemand on the interconnect layers drives higher levels of interconnectlayers. However, the stacking of interconnect layers is limited in partby the topology of the underlying layers. For example, as interconnectlayers are built up, islands, ridges, and troughs can occur. Theseislands, ridges, and troughs can cause breaks in the interconnect linesthat cross them.

To mitigate these islands and troughs, the semiconductor manufacturingprocess utilizes a chemical mechanical polishing (CMP) procedure tomechanically and chemically polish the surface of the semiconductorwafer such that each subsequent interconnect layer is deposited on asubstantially flat surface. Like the photolithography process thequality of the CMP process is layout pattern dependent. Specifically, anuneven distribution of a layout features across a die or a wafer cancause too much material to be removed in some places and not enoughmaterial to be removed in other places, thus causing variations in theinterconnect thickness and unacceptable variations in the capacitanceand resistance of the interconnect layer. The capacitance and resistancevariation within the interconnect layer may alter the timing of acritical net causing design failure.

The CMP process requires that dummy fill be added in the areas withoutinterconnect shapes so that a substantially uniform wafer topology isprovided to avoid dishing and improve center-to-edge uniformity.Traditionally, dummy fill is placed post-design. Thus, in thetraditional approach the designer is not aware of the dummy fillcharacteristics. Consequently, the dummy fill placed post-design mayadversely influence the design performance in a manner that has not beenevaluated by the designer. Also, because the conventional topology priorto the dummy fill is unconstrained, i.e., non-uniform, the post-designdummy fill will not be uniform and predictable. Therefore, in theconventional process, the capacitive coupling between the dummy fillregions and the neighboring active nets cannot be predicted by thedesigner.

As previously discussed, the dynamic array disclosed herein providesoptimal regularity by maximally filling all interconnect tracks fromgate electrode layer upward. If multiple nets are required in a singleinterconnect track, the interconnect track is split with a minimallyspaced gap. For example, track 809 representing the metal 1 conductionline in FIG. 8A represents three separate nets in the same track, whereeach net corresponds to a particular track segment. More specifically,there are two poly contact nets and a floating net to fill the trackwith minimal spacing between the track segments. The substantiallycomplete filling of tracks maintains the regular pattern that createsresonant images across the dynamic array. Also, the regular architectureof the dynamic array with maximally filled interconnect tracks ensuresthat the dummy fill is placed in a uniform manner across the die.Therefore, the regular architecture of the dynamic array assists the CMPprocess to produce substantially uniform results across the die/wafer.Also, the regular gate pattern of the dynamic array assists with gateetching uniformity (microloading). Additionally, the regulararchitecture of the dynamic array combined with the maximally filledinterconnect tracks allows the designer to analyze the capacitivecoupling effects associated with the maximally filled tracks during thedesign phase and prior to fabrication.

Because the dynamic array sets the size and spacing of the linearlyshaped features, i.e., tracks and contacts, in each mask layer, thedesign of the dynamic array can be optimized for the maximum capabilityof the manufacturing equipment and processes. That is to say, becausethe dynamic array is restricted to the regular architecture for eachlayer above diffusion, the manufacturer is capable of optimizing themanufacturing process for the specific characteristics of the regulararchitecture. It should be appreciated that with the dynamic array, themanufacturer does not have to be concerned with accommodating themanufacture of a widely varying set of arbitrarily-shaped layoutfeatures as is present in conventional unconstrained layouts.

An example of how the capability of manufacturing equipment can beoptimized is provided as follows. Consider that a 90 nm process has ametal 2 pitch of 280 nm. This metal 2 pitch of 280 nm is not set by themaximum capability of equipment. Rather, this metal 2 pitch of 280 nm isset by the lithography of the vias. With the via lithography issuesremoved, the maximum capability of the equipment allows for a metal 2pitch of about 220 nm. Thus, the design rules for metal 2 pitch includeabout 25% margin to account for the light interaction unpredictabilityin the via lithography.

The regular architecture implemented within the dynamic array allows thelight interaction unpredictability in the via lithography to be removed,thus allowing for a reduction in the metal 2 pitch margin. Such areduction in the metal 2 pitch margin allows for a more dense design,i.e., allows for optimization of chip area utilization. Additionally,with the restricted, i.e., regular, topology afforded by the dynamicarray, the margin in the design rules can be reduced. Moreover, not onlycan the excess margin beyond the capability of the process be reduced,the restricted topology afforded by the dynamic array also allows thenumber of required design rules to be substantially reduced. Forexample, a typical design rule set for an unconstrained topology couldhave more than 600 design rules. A design rule set for use with thedynamic array may have about 45 design rules. Therefore, the effortrequired to analyze and verify the design against the design rules isdecreased by more than a factor of ten with the restricted topology ofthe dynamic array.

When dealing with line end-to-line end gaps (i.e., tracksegment-to-track segment gaps) in a given track of a mask layer in thedynamic array, a limited number of light interactions exist. Thislimited number of light interactions can be identified, predicted, andaccurately compensated for ahead of time, dramatically reducing orcompletely eliminating the requirement for OPC/RET. The compensation forlight interactions at line end-to-line end gaps represents alithographic modification of the as-drawn feature, as opposed to acorrection based on modeling of interactions, e.g., OPC/RET, associatedwith the as-drawn feature.

Also, with the dynamic array, changes to the as-drawn layout are onlymade where needed. In contrast, OPC is performed over an entire layoutin a conventional design flow. In one embodiment, a correction model canbe implemented as part of the layout generation for the dynamic array.For example, due to the limited number of possible line end gapinteractions, a router can be programmed to insert a line break havingcharacteristics defined as a function of its surroundings, i.e., as afunction of its particular line end gap light interactions. It should befurther appreciated that the regular architecture of the dynamic arrayallows the line ends to be adjusted by changing vertices rather than byadding vertices. Thus, in contrast with unconstrained topologies thatrely on the OPC process, the dynamic array significantly reduces thecost and risk of mask production. Also, because the line end gapinteractions in the dynamic array can be accurately predicted in thedesign phase, compensation for the predicted line end gap interactionsduring the design phase does not increase risk of design failure.

In conventional unconstrained topologies, designers are required to haveknowledge of the physics associated with the manufacturing process dueto the presence of design dependent failures. With the grid-based systemof the dynamic array as disclosed herein, the logical design can beseparated from the physical design. More specifically, with the regulararchitecture of the dynamic array, the limited number of lightinteractions to be evaluated within the dynamic array, and the designindependent nature of the dynamic array, designs can be representedusing a grid point based netlist, as opposed to a physical netlist.

With the dynamic array, the design is not required to be represented interms of physical information. Rather, the design can be represented asa symbolic layout. Thus, the designer can represent the design from apure logic perspective without having to represent physicalcharacteristics, e.g., sizes, of the design. It should be understoodthat the grid-based netlist, when translated to physical, matches theoptimum design rules exactly for the dynamic array platform. When thegrid-based dynamic array moves to a new technology, e.g., smallertechnology, a grid-based netlist can be moved directly to the newtechnology because there is no physical data in the designrepresentation. In one embodiment, the grid-based dynamic array systemincludes a rules database, a grid-based (symbolic) netlist, and thedynamic array architecture.

It should be appreciated that the grid-based dynamic array eliminatestopology related failures associated with conventional unconstrainedarchitectures. Also, because the manufacturability of the grid-baseddynamic array is design independent, the yield of the design implementedon the dynamic array is independent of the design. Therefore, becausethe validity and yield of the dynamic array is preverified, thegrid-based netlist can be implemented on the dynamic array withpreverified yield performance.

FIG. 14 is an illustration showing a semiconductor chip structure 1400,in accordance with one embodiment of the present invention. Thesemiconductor chip structure 1400 represents an exemplary portion of asemiconductor chip, including a diffusion region 1401 having a number ofconductive lines 1403A-1403G defined thereover. The diffusion region1401 is defined in a substrate 1405, to define an active region for atleast one transistor device. The diffusion region 1401 can be defined tocover an area of arbitrary shape relative to the substrate 1405 surface.

The conductive lines 1403A-1403G are arranged to extend over thesubstrate 1405 in a common direction 1407. It should also be appreciatedthat each of the number of conductive lines 1403A-1403G are restrictedto extending over the diffusion region 1401 in the common direction1407. In one embodiment, the conductive lines 1403A-1403G definedimmediately over the substrate 1405 are polysilicon lines. In oneembodiment, each of the conductive lines 1403A-1403G is defined to haveessentially the same width 1409 in a direction perpendicular to thecommon direction 1407 of extension. In another embodiment, some of theconductive lines 1403A-1403G are defined to have different widthsrelative to the other conductive lines. However, regardless of the widthof the conductive lines 1403A-1403G, each of the conductive lines1403A-1403G is spaced apart from adjacent conductive lines according toessentially the same center-to-center pitch 1411.

As shown in FIG. 14, some of the conductive lines (1403B-1403E) extendover the diffusion region 1401, and other conductive lines (1403A,1403F, 1403G) extend over non-diffusion portions the substrate 1405. Itshould be appreciated that the conductive lines 1403A-1403G maintaintheir width 1409 and pitch 1411 regardless of whether they are definedover diffusion region 1401 or not. Also, it should be appreciated thatthe conductive lines 1403A-1403G maintain essentially the same length1413 regardless of whether they are defined over diffusion region 1401or not, thereby maximizing lithographic reinforcement between theconductive lines 1403A-1403G across the substrate. In this manner, someof the conductive lines, e.g., 1403D, defined over the diffusion region1401 include a necessary active portion 1415, and one or more uniformityextending portions 1417.

It should be appreciated that the semiconductor chip structure 1400represents a portion of the dynamic array described above with respectto FIGS. 2-13D. Therefore, it should be understood that the uniformityextending portions 1417 of the conductive lines (1403B-1403E) arepresent to provide lithographic reinforcement of neighboring conductivelines 1403A-1403G. Also, although they may not be required for circuitoperation, each of conductive lines 1403A, 1403F, and 1403G are presentto provide lithographic reinforcement of neighboring conductive lines1403A-1403G.

The concept of the necessary active portion 1415 and the uniformityextending portions 1417 also applies to higher level interconnectlayers. As previously described with regard to the dynamic arrayarchitecture, adjacent interconnect layers traverse over the substratein transverse directions, e.g., perpendicular or diagonal directions, toenable routing/connectivity required by the logic device implementedwithin the dynamic array. As with the conductive lines 1403A-1403G, eachof the conductive lines within an interconnect layer may include arequired portion (necessary active portion) to enable requiredrouting/connectivity, and a non-required portion (uniformity extendingportion) to provide lithographic reinforcement to neighboring conductivelines. Also, as with the conductive lines 1403A-1403G, the conductivelines within an interconnect layer extend in a common direction over thesubstrate, have essentially the same width, and are spaced apart fromeach other according to an essentially constant pitch.

In one embodiment, conductive lines within an interconnect layer followessentially the same ratio between line width and line spacing. Forexample, at 90 nm the metal 4 pitch is 280 nm with a line width and linespacing equal to 140 nm. Larger conductive lines can be printed on alarger line pitch if the line width is equal to the line spacing.

FIG. 14A shows an annotated version of FIG. 14. The features depicted inFIG. 14A are exactly the same as the features depicted in FIG. 14. FIG.14A shows each of the conductive lines 1403B and 1403C to have auniformity extending portion 14 a 01 as measured in the common direction1407. FIG. 14A shows each of the conductive lines 1403D and 1403E tohave a uniformity extending portion 14 a 03 as measured in the commondirection 1407. FIG. 14A shows each of the conductive lines 1403B,1403C, 1403D, and 1403E to have a uniformity extending portion 14 a 05as measured in the common direction 1407. FIG. 15 shows an examplelayout architecture defined in accordance with one embodiment of thepresent invention. The layout architecture follows a grid pattern and isbased upon a horizontal grid and a vertical grid. The horizontal grid isset by the poly gate pitch. The vertical pitch is set by the metal1/metal 3 pitch. All of the rectangular shapes should be centered on agrid point. The layout architecture minimizes the use of bends toeliminate unpredictable lithographic interactions. Bends are allowed onthe diffusion layer to control transistor device sizes. Other layersshould be rectangular in shape and fixed in one dimension.

FIG. 15A shows an annotated version of FIG. 15. The features depicted inFIG. 15A are exactly the same as the features depicted in FIG. 15. FIG.15A shows a first electrical connection 15 a 01 (as denoted by the heavysolid black line). FIG. 15A shows a second electrical connection 15 a 03(as denoted by the heavy dashed black line).

The invention described herein can be embodied as computer readable codeon a computer readable medium. The computer readable medium is any datastorage device that can store data which can be thereafter be read by acomputer system. Examples of the computer readable medium include harddrives, network attached storage (NAS), read-only memory, random-accessmemory, CD-ROMs, CD-Rs, CD-RWs, magnetic tapes, and other optical andnon-optical data storage devices. The computer readable medium can alsobe distributed over a network coupled computer systems so that thecomputer readable code is stored and executed in a distributed fashion.Additionally, a graphical user interface (GUI) implemented as computerreadable code on a computer readable medium can be developed to providea user interface for performing any embodiment of the present invention.

While this invention has been described in terms of several embodiments,it will be appreciated that those skilled in the art upon reading thepreceding specifications and studying the drawings will realize variousalterations, additions, permutations and equivalents thereof. Therefore,it is intended that the present invention includes all such alterations,additions, permutations, and equivalents as fall within the true spiritand scope of the invention.

What is claimed is:
 1. A semiconductor chip, comprising: a regionincluding a plurality of transistors, each of the plurality oftransistors in the region forming part of circuitry associated withexecution of one or more logic functions, the region including at leastten conductive structures formed within the semiconductor chip, some ofthe at least ten conductive structures forming at least one transistorgate electrode, each of the at least ten conductive structuresrespectively having a corresponding top surface, wherein an entirety ofa periphery of the corresponding top surface is defined by acorresponding first end, a corresponding second end, a correspondingfirst edge, and a corresponding second edge, such that a total distancealong the entirety of the periphery of the corresponding top surface isequal to a sum of a total distance along the corresponding first edgeand a total distance along the corresponding second edge and a totaldistance along the corresponding first end and a total distance alongthe corresponding second end, wherein the total distance along thecorresponding first edge is greater than two times the total distancealong the corresponding first end, wherein the total distance along thecorresponding first edge is greater than two times the total distancealong the corresponding second end, wherein the total distance along thecorresponding second edge is greater than two times the total distancealong the corresponding first end, wherein the total distance along thecorresponding second edge is greater than two times the total distancealong the corresponding second end, wherein the corresponding first endextends from the corresponding first edge to the corresponding secondedge and is located principally within a space between the correspondingfirst and second edges, wherein the corresponding second end extendsfrom the corresponding first edge to the corresponding second edge andis located principally within the space between the corresponding firstand second edges, the top surfaces of the at least ten conductivestructures co-planar with each other, each of the at least tenconductive structures having a corresponding lengthwise centerlineoriented in a first direction along its top surface and extending fromits first end to its second end, each of the at least ten conductivestructures having a length as measured along its lengthwise centerlinefrom its first end to its second end, wherein the first edge of each ofthe at least ten conductive structures is substantially straight,wherein the second edge of each of the at least ten conductivestructures is substantially straight, each of the at least tenconductive structures having both its first edge and its second edgeoriented substantially parallel to its lengthwise centerline, each ofthe at least ten conductive structures having a width measured in asecond direction perpendicular to the first direction at a midpoint ofits lengthwise centerline, each of the first direction and the seconddirection oriented substantially parallel to the co-planar top surfacesof the at least ten conductive structures, wherein the at least tenconductive structures are positioned in a side-by-side manner such thateach of the at least ten conductive structures is positioned to have atleast a portion of its length beside at least a portion of the length ofanother of the at least ten conductive structures, wherein the width ofeach of the at least ten conductive structures is less than 45nanometers, the region having a size of about 965 nanometers as measuredin the second direction, each of the at least ten conductive structurespositioned such that a distance as measured in the second directionbetween its lengthwise centerline and the lengthwise centerline of atleast one other of the at least ten conductive structures issubstantially equal to a first pitch that is less than or equal to about193 nanometers, wherein the at least ten conductive structures includesa first conductive structure, the first conductive structure including aportion that forms a gate electrode of first transistor of a firsttransistor type, the first conductive structure including a portion thatforms a gate electrode of a first transistor of a second transistortype, wherein the at least ten conductive structures includes a secondconductive structure, the second conductive structure including aportion that forms a gate electrode of a second transistor of the firsttransistor type, wherein any transistor having its gate electrode formedby the second conductive structure is of the first transistor type,wherein the at least ten conductive structures includes a thirdconductive structure, the third conductive structure including a portionthat forms a gate electrode of a second transistor of the secondtransistor type, wherein any transistor having its gate electrode formedby the third conductive structure is of the second transistor type,wherein the at least ten conductive structures includes a fourthconductive structure, the fourth conductive structure including aportion that forms a gate electrode of a third transistor of the firsttransistor type, wherein any transistor having its gate electrode formedby the fourth conductive structure is of the first transistor type,wherein the at least ten conductive structures includes a fifthconductive structure, the fifth conductive structure including a portionthat forms a gate electrode of a third transistor of the secondtransistor type, wherein any transistor having its gate electrode formedby the fifth conductive structure is of the second transistor type,wherein the first transistor of the first transistor type includes afirst diffusion terminal and the second transistor of the firsttransistor type includes a first diffusion terminal, the first diffusionterminal of the first transistor of the first transistor typeelectrically connected to the first diffusion terminal of the secondtransistor of the first transistor type through a first electricalconnection, wherein the first transistor of the second transistor typeincludes a first diffusion terminal, and the second transistor of thesecond transistor type includes a first diffusion terminal, the firstdiffusion terminal of the first transistor of the second transistor typeelectrically connected to the first diffusion terminal of the secondtransistor of the second transistor type through a second electricalconnection, wherein the second transistor of the first transistor typeincludes a second diffusion terminal, and the third transistor of thefirst transistor type includes a first diffusion terminal, the seconddiffusion terminal of the second transistor of the first transistor typeelectrically connected to the first diffusion terminal of the thirdtransistor of the first transistor type through a third electricalconnection, wherein the second transistor of the second transistor typeincludes a second diffusion terminal, and the third transistor of thesecond transistor type includes a first diffusion terminal, the seconddiffusion terminal of the second transistor of the second transistortype electrically connected to the first diffusion terminal of the thirdtransistor of the second transistor type through a fourth electricalconnection, wherein the third transistor of the first transistor typeincludes a second diffusion terminal electrically connected to a firstdiffusion terminal of a fourth transistor of the first transistor typethrough a fifth electrical connection, wherein the third transistor ofthe second transistor type includes a second diffusion terminalelectrically connected to a first diffusion terminal of a fourthtransistor of the second transistor type through a sixth electricalconnection, wherein the third electrical connection is electricallyconnected to the fourth electrical connection through a seventhelectrical connection, wherein the seventh electrical connectionincludes one or more overlying interconnect conductive structures formedat a respective vertical position within the semiconductor chipoverlying some of the at least ten conductive structures so as to beseparated from the co-planar top surfaces of the at least ten conductivestructures by at least one dielectric material, wherein each overlyinginterconnect conductive structure that is part of the seventh electricalconnection has a respective top surface with an entirety of a peripheryof the respective top surface defined by a corresponding first end, acorresponding second end, a corresponding first edge, and acorresponding second edge, such that a total distance along the entiretyof the periphery of the respective top surface is equal to a sum of atotal distance along the corresponding first edge and a total distancealong the corresponding second edge and a total distance along thecorresponding first end and a total distance along the correspondingsecond end, wherein the total distance along the corresponding firstedge is greater than two times the total distance along thecorresponding first end and is greater than two times the total distancealong the corresponding second end, wherein the total distance along thecorresponding second edge is greater than two times the total distancealong the corresponding first end and is greater than two times thetotal distance along the corresponding second end, wherein thecorresponding first end extends from the corresponding first edge to thecorresponding second edge and is located principally within a spacebetween the corresponding first edge and the corresponding second edge,wherein the corresponding second end extends from the correspondingfirst edge to the corresponding second edge and is located principallywithin a space between the corresponding first edge and thecorresponding second edge, wherein each overlying interconnectconductive structure that is part of the seventh electrical connectionhas a respective lengthwise centerline oriented along its respective topsurface to extend from its corresponding first end to its correspondingsecond end, with each of the corresponding first edge and thecorresponding second edge being substantially straight and orientedsubstantially parallel to its respective lengthwise centerline, whereinthe gate electrode of the second transistor of the first transistor typeis electrically connected to the gate electrode of the third transistorof the second transistor type through an eighth electrical connection,wherein each transistor of the first transistor type having its gateelectrode formed by any of the at least ten conductive structures isincluded in a first collection of transistors, and wherein eachtransistor of the second transistor type having its gate electrodeformed by any of the at least ten conductive structures is included in asecond collection of transistors, wherein the first collection oftransistors is separated from the second collection of transistors by aninner sub-region of the region, wherein the inner sub-region does notinclude a source or a drain of any transistor.
 2. The semiconductor chipas recited in claim 1, wherein the region includes a first interconnectconductive structure positioned within either of a first interconnectlevel, a second interconnect level, a third interconnect level, or afourth interconnect level, the first interconnect conductive structurehaving a top surface, an entirety of a periphery of the top surface ofthe first interconnect conductive structure defined by a first end ofthe first interconnect conductive structure, a second end of the firstinterconnect conductive structure, a first edge of the firstinterconnect conductive structure, and a second edge of the firstinterconnect conductive structure, such that a total distance along theentirety of the periphery of the top surface of the first interconnectconductive structure is equal to a sum of a total distance along thefirst edge of the first interconnect conductive structure and a totaldistance along the second edge of the first interconnect conductivestructure and a total distance along the first end of the firstinterconnect conductive structure and a total distance along the secondend of the first interconnect conductive structure, wherein the totaldistance along the first edge of the first interconnect conductivestructure is greater than two times the total distance along the firstend of the first interconnect conductive structure, wherein the totaldistance along the first edge of the first interconnect conductivestructure is greater than two times the total distance along the secondend of the first interconnect conductive structure, wherein the totaldistance along the second edge of the first interconnect conductivestructure is greater than two times the total distance along the firstend of the first interconnect conductive structure, wherein the totaldistance along the second edge of the first interconnect conductivestructure is greater than two times the total distance along the secondend of the first interconnect conductive structure, wherein the firstend of the first interconnect conductive structure extends from thefirst edge of the first interconnect conductive structure to the secondedge of the first interconnect conductive structure and is locatedprincipally within a space between the first and second edges of thefirst interconnect conductive structure, wherein the second end of thefirst interconnect conductive structure extends from the first edge ofthe first interconnect conductive structure to the second edge of thefirst interconnect conductive structure and is located principallywithin the space between the first and second edges of the firstinterconnect conductive structure, the first interconnect conductivestructure having a lengthwise centerline oriented in the first directionalong its top surface and extending from its first end to its secondend, wherein the first edge of the first interconnect conductivestructure is substantially straight and is oriented substantiallyparallel to the lengthwise centerline of the first interconnectconductive structure, wherein the second edge of the first interconnectconductive structure is substantially straight and is orientedsubstantially parallel to the lengthwise centerline of the firstinterconnect conductive structure, wherein the first interconnectconductive structure has a length measured along its lengthwisecenterline from its first end to its second end, wherein the firstinterconnect conductive structure has a width measured in the seconddirection perpendicular to the first direction at a midpoint of thelengthwise centerline of the first interconnect conductive structure,wherein the first interconnect level is formed at a vertical positionwithin the semiconductor chip above the at least ten conductivestructures, wherein the first interconnect level is separated from theco-planar top surfaces of the at least ten conductive structures by atleast one dielectric material, wherein the second interconnect level isformed at a vertical position within the semiconductor chip above thefirst interconnect level, wherein the third interconnect level is formedat a vertical position within the semiconductor chip above the secondinterconnect level, and wherein the fourth interconnect level is formedat a vertical position within the semiconductor chip above the thirdinterconnect level.
 3. The semiconductor chip as recited in claim 2,wherein the region includes a second interconnect conductive structurepositioned next to and spaced apart from the first interconnectconductive structure in a same interconnect level as the firstinterconnect conductive structure, the second interconnect conductivestructure having a top surface, an entirety of a periphery of the topsurface of the second interconnect conductive structure defined by afirst end of the second interconnect conductive structure, a second endof the second interconnect conductive structure, a first edge of thesecond interconnect conductive structure, and a second edge of thesecond interconnect conductive structure, such that a total distancealong the entirety of the periphery of the top surface of the secondinterconnect conductive structure is equal to a sum of a total distancealong the first edge of the second interconnect conductive structure anda total distance along the second edge of the second interconnectconductive structure and a total distance along the first end of thesecond interconnect conductive structure and a total distance along thesecond end of the second interconnect conductive structure, wherein thetotal distance along the first edge of the second interconnectconductive structure is greater than two times the total distance alongthe first end of the second interconnect conductive structure, whereinthe total distance along the first edge of the second interconnectconductive structure is greater than two times the total distance alongthe second end of the second interconnect conductive structure, whereinthe total distance along the second edge of the second interconnectconductive structure is greater than two times the total distance alongthe first end of the second interconnect conductive structure, whereinthe total distance along the second edge of the second interconnectconductive structure is greater than two times the total distance alongthe second end of the second interconnect conductive structure, whereinthe first end of the second interconnect conductive structure extendsfrom the first edge of the second interconnect conductive structure tothe second edge of the second interconnect conductive structure and islocated principally within a space between the first and second edges ofthe second interconnect conductive structure, wherein the second end ofthe second interconnect conductive structure extends from the first edgeof the second interconnect conductive structure to the second edge ofthe second interconnect conductive structure and is located principallywithin the space between the first and second edges of the secondinterconnect conductive structure, the second interconnect conductivestructure having a lengthwise centerline oriented in the first directionalong its top surface and extending from its first end to its secondend, wherein the first edge of the second interconnect conductivestructure is substantially straight and is oriented substantiallyparallel to the lengthwise centerline of the second interconnectconductive structure, wherein the second edge of the second interconnectconductive structure is substantially straight and is orientedsubstantially parallel to the lengthwise centerline of the secondinterconnect conductive structure, wherein the second interconnectconductive structure has a length measured along its lengthwisecenterline from its first end to its second end, wherein the secondinterconnect conductive structure has a width measured in the seconddirection perpendicular to the first direction at a midpoint of thelengthwise centerline of the second interconnect conductive structure.4. The semiconductor chip as recited in claim 3, wherein the first andsecond interconnect conductive structures are positioned such that adistance as measured in the second direction between their lengthwisecenterlines is substantially equal to a second pitch, wherein the secondpitch is a fractional multiple of the first pitch.
 5. The semiconductorchip as recited in claim 4, wherein the second pitch is less than orequal to the first pitch.
 6. The semiconductor chip as recited in claim5, wherein at least one of the at least ten conductive structures withinthe region does not form a gate electrode of any transistor and has awidth as measured in the second direction that is substantially equal toa width as measured in the second direction of another of the at leastten conductive structures.
 7. The semiconductor chip as recited in claim6, wherein the first and second interconnect conductive structures arepositioned within either of the first interconnect level, the secondinterconnect level, or the third interconnect level.
 8. Thesemiconductor chip as recited in claim 1, wherein the region includes afirst interconnect conductive structure positioned within either of afirst interconnect level, a second interconnect level, a thirdinterconnect level, or a fourth interconnect level, the firstinterconnect conductive structure having a top surface, an entirety of aperiphery of the top surface of the first interconnect conductivestructure defined by a first end of the first interconnect conductivestructure, a second end of the first interconnect conductive structure,a first edge of the first interconnect conductive structure, and asecond edge of the first interconnect conductive structure, such that atotal distance along the entirety of the periphery of the top surface ofthe first interconnect conductive structure is equal to a sum of a totaldistance along the first edge of the first interconnect conductivestructure and a total distance along the second edge of the firstinterconnect conductive structure and a total distance along the firstend of the first interconnect conductive structure and a total distancealong the second end of the first interconnect conductive structure,wherein the total distance along the first edge of the firstinterconnect conductive structure is greater than two times the totaldistance along the first end of the first interconnect conductivestructure, wherein the total distance along the first edge of the firstinterconnect conductive structure is greater than two times the totaldistance along the second end of the first interconnect conductivestructure, wherein the total distance along the second edge of the firstinterconnect conductive structure is greater than two times the totaldistance along the first end of the first interconnect conductivestructure, wherein the total distance along the second edge of the firstinterconnect conductive structure is greater than two times the totaldistance along the second end of the first interconnect conductivestructure, wherein the first end of the first interconnect conductivestructure extends from the first edge of the first interconnectconductive structure to the second edge of the first interconnectconductive structure and is located principally within a space betweenthe first and second edges of the first interconnect conductivestructure, wherein the second end of the first interconnect conductivestructure extends from the first edge of the first interconnectconductive structure to the second edge of the first interconnectconductive structure and is located principally within the space betweenthe first and second edges of the first interconnect conductivestructure, the first interconnect conductive structure having alengthwise centerline oriented in the second direction along its topsurface and extending from its first end to its second end, wherein thefirst edge of the first interconnect conductive structure issubstantially straight and is oriented substantially parallel to thelengthwise centerline of the first interconnect conductive structure,wherein the second edge of the first interconnect conductive structureis substantially straight and is oriented substantially parallel to thelengthwise centerline of the first interconnect conductive structure,wherein the first interconnect conductive structure has a lengthmeasured along its lengthwise centerline from its first end to itssecond end, wherein the first interconnect conductive structure has awidth measured in the first direction perpendicular to the seconddirection at a midpoint of the lengthwise centerline of the firstinterconnect conductive structure, wherein the first interconnect levelis formed at a vertical position within the semiconductor chip above theat least ten conductive structures, wherein the first interconnect levelis separated from the co-planar top surfaces of the at least tenconductive structures by at least one dielectric material, wherein thesecond interconnect level is formed at a vertical position within thesemiconductor chip above the first interconnect level, wherein the thirdinterconnect level is formed at a vertical position within thesemiconductor chip above the second interconnect level, and wherein thefourth interconnect level is formed at a vertical position within thesemiconductor chip above the third interconnect level.
 9. Thesemiconductor chip as recited in claim 8, wherein the region includes asecond interconnect conductive structure positioned in a sameinterconnect level as the first interconnect conductive structure, thesecond interconnect conductive structure having a top surface, anentirety of a periphery of the top surface of the second interconnectconductive structure defined by a first end of the second interconnectconductive structure, a second end of the second interconnect conductivestructure, a first edge of the second interconnect conductive structure,and a second edge of the second interconnect conductive structure, suchthat a total distance along the entirety of the periphery of the topsurface of the second interconnect conductive structure is equal to asum of a total distance along the first edge of the second interconnectconductive structure and a total distance along the second edge of thesecond interconnect conductive structure and a total distance along thefirst end of the second interconnect conductive structure and a totaldistance along the second end of the second interconnect conductivestructure, wherein the total distance along the first edge of the secondinterconnect conductive structure is greater than two times the totaldistance along the first end of the second interconnect conductivestructure, wherein the total distance along the first edge of the secondinterconnect conductive structure is greater than two times the totaldistance along the second end of the second interconnect conductivestructure, wherein the total distance along the second edge of thesecond interconnect conductive structure is greater than two times thetotal distance along the first end of the second interconnect conductivestructure, wherein the total distance along the second edge of thesecond interconnect conductive structure is greater than two times thetotal distance along the second end of the second interconnectconductive structure, wherein the first end of the second interconnectconductive structure extends from the first edge of the secondinterconnect conductive structure to the second edge of the secondinterconnect conductive structure and is located principally within aspace between the first and second edges of the second interconnectconductive structure, wherein the second end of the second interconnectconductive structure extends from the first edge of the secondinterconnect conductive structure to the second edge of the secondinterconnect conductive structure and is located principally within thespace between the first and second edges of the second interconnectconductive structure, the second interconnect conductive structurehaving a lengthwise centerline oriented in the second direction alongits top surface and extending from its first end to its second end,wherein the first edge of the second interconnect conductive structureis substantially straight and is oriented substantially parallel to thelengthwise centerline of the second interconnect conductive structure,wherein the second edge of the second interconnect conductive structureis substantially straight and is oriented substantially parallel to thelengthwise centerline of the second interconnect conductive structure,wherein the second interconnect conductive structure has a lengthmeasured along its lengthwise centerline from its first end to itssecond end, wherein the second interconnect conductive structure has awidth measured in the first direction perpendicular to the seconddirection at a midpoint of the lengthwise centerline of the secondinterconnect conductive structure, wherein the first and secondinterconnect conductive structures are positioned next to and spacedapart from each other such that a distance as measured in the firstdirection between their lengthwise centerlines is substantially equal toa second pitch.
 10. The semiconductor chip as recited in claim 9,wherein the region includes a third interconnect conductive structurepositioned in the same interconnect level as the first and secondinterconnect conductive structures, the third interconnect conductivestructure having a top surface, an entirety of a periphery of the topsurface of the third interconnect conductive structure defined by afirst end of the third interconnect conductive structure, a second endof the third interconnect conductive structure, a first edge of thethird interconnect conductive structure, and a second edge of the thirdinterconnect conductive structure, such that a total distance along theentirety of the periphery of the top surface of the third interconnectconductive structure is equal to a sum of a total distance along thefirst edge of the third interconnect conductive structure and a totaldistance along the second edge of the third interconnect conductivestructure and a total distance along the first end of the thirdinterconnect conductive structure and a total distance along the secondend of the third interconnect conductive structure, wherein the totaldistance along the first edge of the third interconnect conductivestructure is greater than two times the total distance along the firstend of the third interconnect conductive structure, wherein the totaldistance along the first edge of the third interconnect conductivestructure is greater than two times the total distance along the secondend of the third interconnect conductive structure, wherein the totaldistance along the second edge of the third interconnect conductivestructure is greater than two times the total distance along the firstend of the third interconnect conductive structure, wherein the totaldistance along the second edge of the third interconnect conductivestructure is greater than two times the total distance along the secondend of the third interconnect conductive structure, wherein the firstend of the third interconnect conductive structure extends from thefirst edge of the third interconnect conductive structure to the secondedge of the third interconnect conductive structure and is locatedprincipally within a space between the first and second edges of thethird interconnect conductive structure, wherein the second end of thethird interconnect conductive structure extends from the first edge ofthe third interconnect conductive structure to the second edge of thethird interconnect conductive structure and is located principallywithin the space between the first and second edges of the thirdinterconnect conductive structure, the third interconnect conductivestructure having a lengthwise centerline oriented in the seconddirection along its top surface and extending from its first end to itssecond end, wherein the first edge of the third interconnect conductivestructure is substantially straight and is oriented substantiallyparallel to the lengthwise centerline of the third interconnectconductive structure, wherein the second edge of the third interconnectconductive structure is substantially straight and is orientedsubstantially parallel to the lengthwise centerline of the thirdinterconnect conductive structure, wherein the third interconnectconductive structure has a length measured along its lengthwisecenterline from its first end to its second end, wherein the thirdinterconnect conductive structure has a width measured in the firstdirection perpendicular to the second direction at a midpoint of thelengthwise centerline of the third interconnect conductive structure,wherein the region includes a fourth interconnect conductive structurepositioned in the same interconnect level as the first, second, andthird interconnect conductive structures, the fourth interconnectconductive structure having a top surface, an entirety of a periphery ofthe top surface of the fourth interconnect conductive structure definedby a first end of the fourth interconnect conductive structure, a secondend of the fourth interconnect conductive structure, a first edge of thefourth interconnect conductive structure, and a second edge of thefourth interconnect conductive structure, such that a total distancealong the entirety of the periphery of the top surface of the fourthinterconnect conductive structure is equal to a sum of a total distancealong the first edge of the fourth interconnect conductive structure anda total distance along the second edge of the fourth interconnectconductive structure and a total distance along the first end of thefourth interconnect conductive structure and a total distance along thesecond end of the fourth interconnect conductive structure, wherein thetotal distance along the first edge of the fourth interconnectconductive structure is greater than two times the total distance alongthe first end of the fourth interconnect conductive structure, whereinthe total distance along the first edge of the fourth interconnectconductive structure is greater than two times the total distance alongthe second end of the fourth interconnect conductive structure, whereinthe total distance along the second edge of the fourth interconnectconductive structure is greater than two times the total distance alongthe first end of the fourth interconnect conductive structure, whereinthe total distance along the second edge of the fourth interconnectconductive structure is greater than two times the total distance alongthe second end of the fourth interconnect conductive structure, whereinthe first end of the fourth interconnect conductive structure extendsfrom the first edge of the fourth interconnect conductive structure tothe second edge of the fourth interconnect conductive structure and islocated principally within a space between the first and second edges ofthe fourth interconnect conductive structure, wherein the second end ofthe fourth interconnect conductive structure extends from the first edgeof the fourth interconnect conductive structure to the second edge ofthe fourth interconnect conductive structure and is located principallywithin the space between the first and second edges of the fourthinterconnect conductive structure, the fourth interconnect conductivestructure having a lengthwise centerline oriented in the seconddirection along its top surface and extending from its first end to itssecond end, wherein the first edge of the fourth interconnect conductivestructure is substantially straight and is oriented substantiallyparallel to the lengthwise centerline of the fourth interconnectconductive structure, wherein the second edge of the fourth interconnectconductive structure is substantially straight and is orientedsubstantially parallel to the lengthwise centerline of the fourthinterconnect conductive structure, wherein the fourth interconnectconductive structure has a length measured along its lengthwisecenterline from its first end to its second end, wherein the fourthinterconnect conductive structure has a width measured in the firstdirection perpendicular to the second direction at a midpoint of thelengthwise centerline of the fourth interconnect conductive structure,wherein the third and fourth interconnect conductive structures arepositioned next to and spaced apart from each other such that a distanceas measured in the first direction between their lengthwise centerlinesis substantially equal to the second pitch.
 11. The semiconductor chipas recited in claim 10, wherein at least one of the at least tenconductive structures within the region does not form a gate electrodeof any transistor and has a width as measured in the second directionthat is substantially equal to a width as measured in the seconddirection of another of the at least ten conductive structures.
 12. Thesemiconductor chip as recited in claim 11, wherein the first, second,third, and fourth interconnect conductive structures are positionedwithin either of the first interconnect level, the second interconnectlevel, or the third interconnect level.
 13. The semiconductor chip asrecited in claim 1, wherein the eighth electrical connection includesone or more overlying interconnect conductive structures, or the ninthelectrical connection includes one or more overlying interconnectconductive structures, or both the eighth and the ninth electricalconnections include one or more overlying electrical connections,wherein each overlying interconnect conductive structure is formed at arespective vertical position within the semiconductor chip overlyingsome of the at least ten conductive structures so as to be separatedfrom the co-planar top surfaces of the at least ten conductivestructures by at least one dielectric material, wherein each overlyinginterconnect conductive structure that is part of the eighth or ninthelectrical connection has a respective top surface with an entirety of aperiphery of the respective top surface defined by a corresponding firstend, a corresponding second end, a corresponding first edge, and acorresponding second edge, such that a total distance along the entiretyof the periphery of the respective top surface is equal to a sum of atotal distance along the corresponding first edge and a total distancealong the corresponding second edge and a total distance along thecorresponding first end and a total distance along the correspondingsecond end, wherein the total distance along the corresponding firstedge is greater than two times the total distance along thecorresponding first end and is greater than two times the total distancealong the corresponding second end, wherein the total distance along thecorresponding second edge is greater than two times the total distancealong the corresponding first end and is greater than two times thetotal distance along the corresponding second end, wherein thecorresponding first end extends from the corresponding first edge to thecorresponding second edge and is located principally within a spacebetween the corresponding first edge and the corresponding second edge,wherein the corresponding second end extends from the correspondingfirst edge to the corresponding second edge and is located principallywithin a space between the corresponding first edge and thecorresponding second edge, wherein each overlying interconnectconductive structure that is part of the eighth or ninth electricalconnection has a respective lengthwise centerline oriented along itsrespective top surface to extend from its corresponding first end to itscorresponding second end, with each of the corresponding first edge andthe corresponding second edge being substantially straight and orientedsubstantially parallel to its respective lengthwise centerline.
 14. Thesemiconductor chip as recited in claim 1, wherein the lengthwisecenterline of the second conductive structure is substantially alignedwith the lengthwise centerline of the third conductive structure, andwherein the lengthwise centerline of the fourth conductive structure issubstantially aligned with the lengthwise centerline of the fifthconductive structure.
 15. The semiconductor chip as recited in claim 14,wherein a gate electrode of the fourth transistor of the firsttransistor type and a gate electrode of the fourth transistor of thesecond transistor type are formed by respective portions of a single oneof the at least ten conductive structures.
 16. The semiconductor chip asrecited in claim 15, wherein at least one of the at least ten conductivestructures within the region is a non-gate forming conductive structurethat does not form a gate electrode of any transistor, the non-gateforming conductive structure positioned between at least two neighboringconductive structures of the at least ten conductive structures, with atleast one of the at least two neighboring conductive structures formingat least one gate electrode of at least one transistor, the non-gateforming conductive structure positioned such that its lengthwisecenterline is separated from the lengthwise centerlines of each of theat least two neighboring conductive structures by the first pitch asmeasured in the second direction, the non-gate forming conductivestructure having a width as measured in the second direction that issubstantially equal to a width as measured in the second direction of atleast one of the at least two neighboring conductive structures, thenon-gate forming conductive structure having an overall length asmeasured in the first direction that is substantially equal to anoverall length as measured in the first direction of at least one of theat least two neighboring conductive structures.
 17. The semiconductorchip as recited in claim 16, wherein the region includes a firstconnection forming conductive structure positioned to physically join tothe top surface of the second conductive structure, wherein the firstconnection forming conductive structure is positioned a first connectiondistance away from a nearest gate electrode forming portion of thesecond conductive structure, the first connection distance measured inthe first direction between closest located portions of the firstconnection forming conductive structure and the nearest gate electrodeforming portion of the second conductive structure, wherein the regionincludes a second connection forming conductive structure positioned tophysically join to the top surface of the third conductive structure,wherein the second connection forming conductive structure is positioneda second connection distance away from a nearest gate electrode formingportion of the third conductive structure, the second connectiondistance measured in the first direction between closest locatedportions of the second connection forming conductive structure and thenearest gate electrode forming portion of the third conductivestructure, wherein the region includes a third connection formingconductive structure positioned to physically join to the top surface ofthe fourth conductive structure, wherein the third connection formingconductive structure is positioned a third connection distance away froma nearest gate electrode forming portion of the fourth conductivestructure, the third connection distance measured in the first directionbetween closest located portions of the third connection formingconductive structure and the nearest gate electrode forming portion ofthe fourth conductive structure, wherein the region includes a fourthconnection forming conductive structure positioned to physically join tothe top surface of the fifth conductive structure, wherein the fourthconnection forming conductive structure is positioned a fourthconnection distance away from a nearest gate electrode forming portionof the fifth conductive structure, the fourth connection distancemeasured in the first direction between closest located portions of thefourth connection forming conductive structure and the nearest gateelectrode forming portion of the fifth conductive structure, wherein atleast two of the first, second, third, and fourth connection distancesare different.
 18. The semiconductor chip as recited in claim 17,wherein the eighth electrical connection includes one or more overlyinginterconnect conductive structures formed at a respective verticalposition within the semiconductor chip overlying some of the at leastten conductive structures so as to be separated from the co-planar topsurfaces of the at least ten conductive structures by at least onedielectric material, wherein each overlying interconnect conductivestructure that is part of the eighth electrical connection has arespective top surface with an entirety of a periphery of the respectivetop surface defined by a corresponding first end, a corresponding secondend, a corresponding first edge, and a corresponding second edge, suchthat a total distance along the entirety of the periphery of therespective top surface is equal to a sum of a total distance along thecorresponding first edge and a total distance along the correspondingsecond edge and a total distance along the corresponding first end and atotal distance along the corresponding second end, wherein the totaldistance along the corresponding first edge is greater than two timesthe total distance along the corresponding first end and is greater thantwo times the total distance along the corresponding second end, whereinthe total distance along the corresponding second edge is greater thantwo times the total distance along the corresponding first end and isgreater than two times the total distance along the corresponding secondend, wherein the corresponding first end extends from the correspondingfirst edge to the corresponding second edge and is located principallywithin a space between the corresponding first edge and thecorresponding second edge, wherein the corresponding second end extendsfrom the corresponding first edge to the corresponding second edge andis located principally within a space between the corresponding firstedge and the corresponding second edge, wherein each overlyinginterconnect conductive structure that is part of the eighth electricalconnection has a respective lengthwise centerline oriented along itsrespective top surface to extend from its corresponding first end to itscorresponding second end, with each of the corresponding first edge andthe corresponding second edge being substantially straight and orientedsubstantially parallel to its respective lengthwise centerline.
 19. Thesemiconductor chip as recited in claim 14, wherein the eighth electricalconnection includes one or more overlying interconnect conductivestructures formed at a respective vertical position within thesemiconductor chip overlying some of the at least ten conductivestructures so as to be separated from the co-planar top surfaces of theat least ten conductive structures by at least one dielectric material,wherein each overlying interconnect conductive structure that is part ofthe eighth electrical connection has a respective top surface with anentirety of a periphery of the respective top surface defined by acorresponding first end, a corresponding second end, a correspondingfirst edge, and a corresponding second edge, such that a total distancealong the entirety of the periphery of the respective top surface isequal to a sum of a total distance along the corresponding first edgeand a total distance along the corresponding second edge and a totaldistance along the corresponding first end and a total distance alongthe corresponding second end, wherein the total distance along thecorresponding first edge is greater than two times the total distancealong the corresponding first end and is greater than two times thetotal distance along the corresponding second end, wherein the totaldistance along the corresponding second edge is greater than two timesthe total distance along the corresponding first end and is greater thantwo times the total distance along the corresponding second end, whereinthe corresponding first end extends from the corresponding first edge tothe corresponding second edge and is located principally within a spacebetween the corresponding first edge and the corresponding second edge,wherein the corresponding second end extends from the correspondingfirst edge to the corresponding second edge and is located principallywithin a space between the corresponding first edge and thecorresponding second edge, wherein each overlying interconnectconductive structure that is part of the eighth electrical connectionhas a respective lengthwise centerline oriented along its respective topsurface to extend from its corresponding first end to its correspondingsecond end, with each of the corresponding first edge and thecorresponding second edge being substantially straight and orientedsubstantially parallel to its respective lengthwise centerline.
 20. Thesemiconductor chip as recited in claim 14, wherein three of the first,second, third, fourth, and fifth conductive structures have differentlengths.
 21. The semiconductor chip as recited in claim 20, wherein theregion includes a first connection forming conductive structurepositioned to physically join to the top surface of the secondconductive structure, wherein the region includes a second connectionforming conductive structure positioned to physically join to the topsurface of the third conductive structure, wherein the region includes athird connection forming conductive structure positioned to physicallyjoin to the top surface of the fourth conductive structure, wherein theregion includes a fourth connection forming conductive structurepositioned to physically join to the top surface of the fifth conductivestructure, wherein at least one of the first, second, third, and fourthconnection forming conductive structures is positioned at a respectivelocation that is not directly above any gate electrode of any transistorof the first collection of transistors and that is not directly aboveany gate electrode of any transistor of the second collection oftransistors and that is not directly above the inner sub-region of theregion.
 22. The semiconductor chip as recited in claim 21, wherein thefirst connection forming conductive structure is positioned a firstconnection distance away from a nearest gate electrode forming portionof the second conductive structure, the first connection distancemeasured in the first direction between closest located portions of thefirst connection forming conductive structure and the nearest gateelectrode forming portion of the second conductive structure, whereinthe second connection forming conductive structure is positioned asecond connection distance away from a nearest gate electrode formingportion of the third conductive structure, the second connectiondistance measured in the first direction between closest locatedportions of the second connection forming conductive structure and thenearest gate electrode forming portion of the third conductivestructure, wherein the third connection forming conductive structure ispositioned a third connection distance away from a nearest gateelectrode forming portion of the fourth conductive structure, the thirdconnection distance measured in the first direction between closestlocated portions of the third connection forming conductive structureand the nearest gate electrode forming portion of the fourth conductivestructure, wherein the fourth connection forming conductive structure ispositioned a fourth connection distance away from a nearest gateelectrode forming portion of the fifth conductive structure, the fourthconnection distance measured in the first direction between closestlocated portions of the fourth connection forming conductive structureand the nearest gate electrode forming portion of the fifth conductivestructure, wherein at least two of the first, second, third, and fourthconnection distances are different.
 23. The semiconductor chip asrecited in claim 22, wherein the first connection forming conductivestructure is positioned a first extension distance away from anextension end of the second conductive structure, wherein the extensionend of the second conductive structure is either the first end or thesecond end of the second conductive structure, the first extensiondistance measured in the first direction pointing away from the gateelectrode of the second transistor of the first transistor type from alocation on the first connection forming conductive structure closest tothe extension end of the second conductive structure, wherein the secondconnection forming conductive structure is positioned a second extensiondistance away from an extension end of the third conductive structure,wherein the extension end of the third conductive structure is eitherthe first end or the second end of the third conductive structure, thesecond extension distance measured in the first direction pointing awayfrom the gate electrode of the second transistor of the secondtransistor type from a location on the second connection formingconductive structure closest to the extension end of the thirdconductive structure, wherein the third connection forming conductivestructure is positioned a third extension distance away from anextension end of the fourth conductive structure, wherein the extensionend of the fourth conductive structure is either the first end or thesecond end of the fourth conductive structure, the third extensiondistance measured in the first direction pointing away from the gateelectrode of the third transistor of the first transistor type from alocation on the third connection forming conductive structure closest tothe extension end of the fourth conductive structure, wherein the fourthconnection forming conductive structure is positioned a fourth extensiondistance away from an extension end of the fifth conductive structure,wherein the extension end of the fifth conductive structure is eitherthe first end or the second end of the fifth conductive structure, thefourth extension distance measured in the first direction pointing awayfrom the gate electrode of the third transistor of the second transistortype from a location on the fourth connection forming conductivestructure closest to the extension end of the fifth conductivestructure, and wherein at least two of the first, second, third, andfourth extension distances are different.
 24. The semiconductor chip asrecited in claim 21, wherein at least two of the first, second, third,and fourth connection forming conductive structures is positioned at arespective location that is not directly above any gate electrode of anytransistor of the first collection of transistors and that is notdirectly above any gate electrode of any transistor of the secondcollection of transistors and that is not directly above the innersub-region of the region.
 25. The semiconductor chip as recited in claim24, wherein at least one of the at least ten conductive structureswithin the region is a non-gate forming conductive structure that doesnot form a gate electrode of any transistor, the non-gate formingconductive structure positioned between at least two neighboringconductive structures of the at least ten conductive structures, with atleast one of the at least two neighboring conductive structures formingat least one gate electrode of at least one transistor, the non-gateforming conductive structure positioned such that its lengthwisecenterline is separated from the lengthwise centerlines of each of theat least two neighboring conductive structures by the first pitch asmeasured in the second direction, the non-gate forming conductivestructure having a width as measured in the second direction that issubstantially equal to a width as measured in the second direction of atleast one of the at least two neighboring conductive structures.
 26. Thesemiconductor chip as recited in claim 25, wherein the region includes afirst gate contact positioned to physically contact the top surface ofthe first conductive structure, the first gate contact substantiallycentered in the second direction upon the first conductive structure,the first gate contact formed to extend in a vertical directionsubstantially perpendicular to the substrate of the semiconductor chipfrom the top surface of the first conductive structure through adielectric material to contact at least one interconnect conductivestructure, wherein the region includes a second gate contact positionedto physically contact the top surface of the second conductivestructure, the second gate contact substantially centered in the seconddirection upon the second conductive structure, the second gate contactformed to extend in the vertical direction substantially perpendicularto the substrate of the semiconductor chip from the top surface of thesecond conductive structure through the dielectric material to contactat least one interconnect conductive structure, wherein the regionincludes a third gate contact positioned to physically contact the topsurface of the third conductive structure, the third gate contactsubstantially centered in the second direction upon the third conductivestructure, the third gate contact formed to extend in the verticaldirection substantially perpendicular to the substrate of thesemiconductor chip from the top surface of the third conductivestructure through the dielectric material to contact at least oneinterconnect conductive structure, wherein the region includes a fourthgate contact positioned to physically contact the top surface of thefourth conductive structure, the fourth gate contact substantiallycentered in the second direction upon the fourth conductive structure,the fourth gate contact formed to extend in the vertical directionsubstantially perpendicular to the substrate of the semiconductor chipfrom the top surface of the fourth conductive structure through thedielectric material to contact at least one interconnect conductivestructure, wherein the region includes a fifth gate contact positionedto physically contact the top surface of the fifth conductive structure,the fifth gate contact substantially centered in the second directionupon the fifth conductive structure, the fifth gate contact formed toextend in the vertical direction substantially perpendicular to thesubstrate of the semiconductor chip from the top surface of the fifthconductive structure through the dielectric material to contact at leastone interconnect conductive structure.
 27. The semiconductor chip asrecited in claim 25, wherein the first connection forming conductivestructure is positioned a first extension distance away from anextension end of the second conductive structure, wherein the extensionend of the second conductive structure is either the first end or thesecond end of the second conductive structure, the first extensiondistance measured in the first direction pointing away from the gateelectrode of the second transistor of the first transistor type from alocation on the first connection forming conductive structure closest tothe extension end of the second conductive structure, wherein the secondconnection forming conductive structure is positioned a second extensiondistance away from an extension end of the third conductive structure,wherein the extension end of the third conductive structure is eitherthe first end or the second end of the third conductive structure, thesecond extension distance measured in the first direction pointing awayfrom the gate electrode of the second transistor of the secondtransistor type from a location on the second connection formingconductive structure closest to the extension end of the thirdconductive structure, wherein the third connection forming conductivestructure is positioned a third extension distance away from anextension end of the fourth conductive structure, wherein the extensionend of the fourth conductive structure is either the first end or thesecond end of the fourth conductive structure, the third extensiondistance measured in the first direction pointing away from the gateelectrode of the third transistor of the first transistor type from alocation on the third connection forming conductive structure closest tothe extension end of the fourth conductive structure, wherein the fourthconnection forming conductive structure is positioned a fourth extensiondistance away from an extension end of the fifth conductive structure,wherein the extension end of the fifth conductive structure is eitherthe first end or the second end of the fifth conductive structure, thefourth extension distance measured in the first direction pointing awayfrom the gate electrode of the third transistor of the second transistortype from a location on the fourth connection forming conductivestructure closest to the extension end of the fifth conductivestructure, and wherein at least two of the first, second, third, andfourth extension distances are different.
 28. A method for manufacturingan integrated circuit within a semiconductor chip, comprising: forming aplurality of transistors within a region of the semiconductor chip, eachof the plurality of transistors in the region forming part of circuitryassociated with execution of one or more logic functions, the pluralityof transistors having respective gate electrodes formed by some of atleast ten conductive structures present within the region, whereinforming the plurality of transistors includes forming each of the atleast ten conductive structures to respectively have a corresponding topsurface, wherein an entirety of a periphery of the corresponding topsurface is defined by a corresponding first end, a corresponding secondend, a corresponding first edge, and a corresponding second edge, suchthat a total distance along the entirety of the periphery of thecorresponding top surface is equal to a sum of a total distance alongthe corresponding first edge and a total distance along thecorresponding second edge and a total distance along the correspondingfirst end and a total distance along the corresponding second end,wherein the total distance along the corresponding first edge is greaterthan two times the total distance along the corresponding first end,wherein the total distance along the corresponding first edge is greaterthan two times the total distance along the corresponding second end,wherein the total distance along the corresponding second edge isgreater than two times the total distance along the corresponding firstend, wherein the total distance along the corresponding second edge isgreater than two times the total distance along the corresponding secondend, wherein the corresponding first end extends from the correspondingfirst edge to the corresponding second edge and is located principallywithin a space between the corresponding first and second edges, whereinthe corresponding second end extends from the corresponding first edgeto the corresponding second edge and is located principally within thespace between the corresponding first and second edges, the top surfacesof the at least ten conductive structures co-planar with each other,wherein forming the plurality of transistors includes forming each ofthe at least ten conductive structures to have a correspondinglengthwise centerline oriented in a first direction along its topsurface and extending from its first end to its second end, each of theat least ten conductive structures having a length as measured along itslengthwise centerline from its first end to its second end, wherein thefirst edge of each of the at least ten conductive structures issubstantially straight, wherein the second edge of each of the at leastten conductive structures is substantially straight, each of the atleast ten conductive structures having both its first edge and itssecond edge oriented substantially parallel to its lengthwisecenterline, each of the at least ten conductive structures having awidth measured in a second direction perpendicular to the firstdirection at a midpoint of its lengthwise centerline, wherein the widthof each of the at least ten conductive structures is less than 45nanometers, each of the first direction and the second directionoriented substantially parallel to the co-planar top surfaces of the atleast ten conductive structures, wherein forming the plurality oftransistors includes positioning the at least ten conductive structuresin a side-by-side manner such that each of the at least ten conductivestructures is positioned to have at least a portion of its length besideat least a portion of the length of another of the at least tenconductive structures, and wherein each of the at least ten conductivestructures is positioned such that a distance as measured in the seconddirection between its lengthwise centerline and the lengthwisecenterline of at least one other of the at least ten conductivestructures is substantially equal to a first pitch that is less than orequal to about 193 nanometers, the at least ten conductive structuresincluding a first conductive structure, the first conductive structureincluding a portion that forms a gate electrode of first transistor of afirst transistor type, the first conductive structure including aportion that forms a gate electrode of a first transistor of a secondtransistor type, the at least ten conductive structures including asecond conductive structure, the second conductive structure including aportion that forms a gate electrode of a second transistor of the firsttransistor type, wherein any transistor having its gate electrode formedby the second conductive structure is of the first transistor type, theat least ten conductive structures including a third conductivestructure, the third conductive structure including a portion that formsa gate electrode of a second transistor of the second transistor type,wherein any transistor having its gate electrode formed by the thirdconductive structure is of the second transistor type, the at least tenconductive structures including a fourth conductive structure, thefourth conductive structure including a portion that forms a gateelectrode of a third transistor of the first transistor type, whereinany transistor having its gate electrode formed by the fourth conductivestructure is of the first transistor type, the at least ten conductivestructures including a fifth conductive structure, the fifth conductivestructure including a portion that forms a gate electrode of a thirdtransistor of the second transistor type, wherein any transistor havingits gate electrode formed by the fifth conductive structure is of thesecond transistor type, the first transistor of the first transistortype including a first diffusion terminal electrically connected to afirst diffusion terminal of the second transistor of the firsttransistor type through a first electrical connection, the firsttransistor of the second transistor type including a first diffusionterminal electrically connected to a first diffusion terminal of thesecond transistor of the second transistor type through a secondelectrical connection, the second transistor of the first transistortype including a second diffusion terminal electrically connected to afirst diffusion terminal of the third transistor of the first transistortype through a third electrical connection, the second transistor of thesecond transistor type including a second diffusion terminalelectrically connected to a first diffusion terminal of the thirdtransistor of the second transistor type through a fourth electricalconnection, the third transistor of the first transistor type includinga second diffusion terminal electrically connected to a first diffusionterminal of a fourth transistor of the first transistor type through afifth electrical connection, the third transistor of the secondtransistor type including a second diffusion terminal electricallyconnected to a first diffusion terminal of a fourth transistor of thesecond transistor type through a sixth electrical connection, whereinthe third electrical connection is electrically connected to the fourthelectrical connection through a seventh electrical connection, whereinthe seventh electrical connection is formed to include one or moreoverlying interconnect conductive structures formed at a respectivevertical position within the semiconductor chip overlying some of the atleast ten conductive structures so as to be separated from the co-planartop surfaces of the at least ten conductive structures by at least onedielectric material, wherein each overlying interconnect conductivestructure that is part of the seventh electrical connection has arespective top surface with an entirety of a periphery of the respectivetop surface defined by a corresponding first end, a corresponding secondend, a corresponding first edge, and a corresponding second edge, suchthat a total distance along the entirety of the periphery of therespective top surface is equal to a sum of a total distance along thecorresponding first edge and a total distance along the correspondingsecond edge and a total distance along the corresponding first end and atotal distance along the corresponding second end, wherein the totaldistance along the corresponding first edge is greater than two timesthe total distance along the corresponding first end and is greater thantwo times the total distance along the corresponding second end, whereinthe total distance along the corresponding second edge is greater thantwo times the total distance along the corresponding first end and isgreater than two times the total distance along the corresponding secondend, wherein the corresponding first end extends from the correspondingfirst edge to the corresponding second edge and is located principallywithin a space between the corresponding first edge and thecorresponding second edge, wherein the corresponding second end extendsfrom the corresponding first edge to the corresponding second edge andis located principally within a space between the corresponding firstedge and the corresponding second edge, wherein each overlyinginterconnect conductive structure that is part of the seventh electricalconnection has a respective lengthwise centerline oriented along itsrespective top surface to extend from its corresponding first end to itscorresponding second end, with each of the corresponding first edge andthe corresponding second edge being substantially straight and orientedsubstantially parallel to its respective lengthwise centerline, whereinthe gate electrode of the second transistor of the first transistor typeis electrically connected to the gate electrode of the third transistorof the second transistor type through an eighth electrical connection,wherein each transistor of the first transistor type having its gateelectrode formed by any of the at least ten conductive structures isincluded in a first collection of transistors, and wherein eachtransistor of the second transistor type having its gate electrodeformed by any of the at least ten conductive structures is included in asecond collection of transistors, wherein the first collection oftransistors is separated from the second collection of transistors by aninner sub-region of the region, wherein the inner sub-region does notinclude a source or a drain of any transistor, wherein the region has asize of about 965 nanometers as measured in the second direction. 29.The method as recited in claim 28, further comprising: forming a firstinterconnect conductive structure positioned within either of a firstinterconnect level, a second interconnect level, a third interconnectlevel, or a fourth interconnect level, the first interconnect conductivestructure formed to have a top surface, an entirety of a periphery ofthe top surface of the first interconnect conductive structure definedby a first end of the first interconnect conductive structure, a secondend of the first interconnect conductive structure, a first edge of thefirst interconnect conductive structure, and a second edge of the firstinterconnect conductive structure, such that a total distance along theentirety of the periphery of the top surface of the first interconnectconductive structure is equal to a sum of a total distance along thefirst edge of the first interconnect conductive structure and a totaldistance along the second edge of the first interconnect conductivestructure and a total distance along the first end of the firstinterconnect conductive structure and a total distance along the secondend of the first interconnect conductive structure, wherein the totaldistance along the first edge of the first interconnect conductivestructure is greater than two times the total distance along the firstend of the first interconnect conductive structure, wherein the totaldistance along the first edge of the first interconnect conductivestructure is greater than two times the total distance along the secondend of the first interconnect conductive structure, wherein the totaldistance along the second edge of the first interconnect conductivestructure is greater than two times the total distance along the firstend of the first interconnect conductive structure, wherein the totaldistance along the second edge of the first interconnect conductivestructure is greater than two times the total distance along the secondend of the first interconnect conductive structure, wherein the firstend of the first interconnect conductive structure extends from thefirst edge of the first interconnect conductive structure to the secondedge of the first interconnect conductive structure and is locatedprincipally within a space between the first and second edges of thefirst interconnect conductive structure, wherein the second end of thefirst interconnect conductive structure extends from the first edge ofthe first interconnect conductive structure to the second edge of thefirst interconnect conductive structure and is located principallywithin the space between the first and second edges of the firstinterconnect conductive structure, the first interconnect conductivestructure having a lengthwise centerline oriented in the first directionalong its top surface and extending from its first end to its secondend, wherein the first edge of the first interconnect conductivestructure is substantially straight and is oriented substantiallyparallel to the lengthwise centerline of the first interconnectconductive structure, wherein the second edge of the first interconnectconductive structure is substantially straight and is orientedsubstantially parallel to the lengthwise centerline of the firstinterconnect conductive structure, wherein the first interconnectconductive structure has a length measured along its lengthwisecenterline from its first end to its second end, wherein the firstinterconnect conductive structure has a width measured in the seconddirection perpendicular to the first direction at a midpoint of thelengthwise centerline of the first interconnect conductive structure;and forming a second interconnect conductive structure at a positionnext to and spaced apart from the first interconnect conductivestructure in a same interconnect level as the first interconnectconductive structure, the second interconnect conductive structureformed to have a top surface, an entirety of a periphery of the topsurface of the second interconnect conductive structure defined by afirst end of the second interconnect conductive structure, a second endof the second interconnect conductive structure, a first edge of thesecond interconnect conductive structure, and a second edge of thesecond interconnect conductive structure, such that a total distancealong the entirety of the periphery of the top surface of the secondinterconnect conductive structure is equal to a sum of a total distancealong the first edge of the second interconnect conductive structure anda total distance along the second edge of the second interconnectconductive structure and a total distance along the first end of thesecond interconnect conductive structure and a total distance along thesecond end of the second interconnect conductive structure, wherein thetotal distance along the first edge of the second interconnectconductive structure is greater than two times the total distance alongthe first end of the second interconnect conductive structure, whereinthe total distance along the first edge of the second interconnectconductive structure is greater than two times the total distance alongthe second end of the second interconnect conductive structure, whereinthe total distance along the second edge of the second interconnectconductive structure is greater than two times the total distance alongthe first end of the second interconnect conductive structure, whereinthe total distance along the second edge of the second interconnectconductive structure is greater than two times the total distance alongthe second end of the second interconnect conductive structure, whereinthe first end of the second interconnect conductive structure extendsfrom the first edge of the second interconnect conductive structure tothe second edge of the second interconnect conductive structure and islocated principally within a space between the first and second edges ofthe second interconnect conductive structure, wherein the second end ofthe second interconnect conductive structure extends from the first edgeof the second interconnect conductive structure to the second edge ofthe second interconnect conductive structure and is located principallywithin the space between the first and second edges of the secondinterconnect conductive structure, the second interconnect conductivestructure having a lengthwise centerline oriented in the first directionalong its top surface and extending from its first end to its secondend, wherein the first edge of the second interconnect conductivestructure is substantially straight and is oriented substantiallyparallel to the lengthwise centerline of the second interconnectconductive structure, wherein the second edge of the second interconnectconductive structure is substantially straight and is orientedsubstantially parallel to the lengthwise centerline of the secondinterconnect conductive structure, wherein the second interconnectconductive structure has a length measured along its lengthwisecenterline from its first end to its second end, wherein the secondinterconnect conductive structure has a width measured in the seconddirection perpendicular to the first direction at a midpoint of thelengthwise centerline of the second interconnect conductive structure,wherein the first and second interconnect conductive structures arepositioned such that a distance as measured in the second directionbetween their lengthwise centerlines is substantially equal to a secondpitch, wherein the second pitch is a fractional multiple of the firstpitch, and wherein the second pitch is less than or equal to the firstpitch, wherein the first interconnect level is formed at a verticalposition within the semiconductor chip above the at least ten conductivestructures, wherein the first interconnect level is separated from theco-planar top surfaces of the at least ten conductive structures by atleast one dielectric material, wherein the second interconnect level isformed at a vertical position within the semiconductor chip above thefirst interconnect level, wherein the third interconnect level is formedat a vertical position within the semiconductor chip above the secondinterconnect level, and wherein the fourth interconnect level is formedat a vertical position within the semiconductor chip above the thirdinterconnect level.
 30. The method as recited in claim 29, wherein theeighth electrical connection is formed to include one or more overlyinginterconnect conductive structures formed at a respective verticalposition within the semiconductor chip overlying some of the at leastten conductive structures so as to be separated from the co-planar topsurfaces of the at least ten conductive structures by at least onedielectric material, wherein each overlying interconnect conductivestructure that is part of the eighth electrical connection has arespective top surface with an entirety of a periphery of the respectivetop surface defined by a corresponding first end, a corresponding secondend, a corresponding first edge, and a corresponding second edge, suchthat a total distance along the entirety of the periphery of therespective top surface is equal to a sum of a total distance along thecorresponding first edge and a total distance along the correspondingsecond edge and a total distance along the corresponding first end and atotal distance along the corresponding second end, wherein the totaldistance along the corresponding first edge is greater than two timesthe total distance along the corresponding first end and is greater thantwo times the total distance along the corresponding second end, whereinthe total distance along the corresponding second edge is greater thantwo times the total distance along the corresponding first end and isgreater than two times the total distance along the corresponding secondend, wherein the corresponding first end extends from the correspondingfirst edge to the corresponding second edge and is located principallywithin a space between the corresponding first edge and thecorresponding second edge, wherein the corresponding second end extendsfrom the corresponding first edge to the corresponding second edge andis located principally within a space between the corresponding firstedge and the corresponding second edge, wherein each overlyinginterconnect conductive structure that is part of the eighth electricalconnection has a respective lengthwise centerline oriented along itsrespective top surface to extend from its corresponding first end to itscorresponding second end, with each of the corresponding first edge andthe corresponding second edge being substantially straight and orientedsubstantially parallel to its respective lengthwise centerline.